Series:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Discover 3 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Series Power - Max FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
APTC60AM18SCG
Microsemi Corporation
54
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 600V 143A SP6
CoolMOS 833W 2 N-Channel (Half Bridge) 600V 143A 18 mOhm @ 71.5A,10V 3.9V @ 4mA 1036nC @ 10V
APTM50AM17FG
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 500V 180A SP6
- 1250W 2 N-Channel (Half Bridge) 500V 180A 20 mOhm @ 90A,10V 5V @ 10mA 560nC @ 10V
APTM50DUM17G
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 500V 180A SP6
- 1250W 2 N-Channel (Dual) 500V 180A 20 mOhm @ 90A,10V 5V @ 10mA 560nC @ 10V