Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Discover 5 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs
APTM100A13SCG
Microsemi Corporation
59
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 1000V 65A SP6
1000V (1kV) 65A 156 mOhm @ 32.5A,10V 562nC @ 10V
APTM100A13SG
Microsemi Corporation
13
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 1000V 65A SP6
1000V (1kV) 65A 156 mOhm @ 32.5A,10V 562nC @ 10V
APTM100A13DG
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 1000V 65A SP6
1000V (1kV) 65A 156 mOhm @ 32.5A,10V 562nC @ 10V
APTM120A20DG
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 1200V 50A SP6
1200V (1.2kV) 50A 240 mOhm @ 25A,10V 600nC @ 10V
APTM120A20SG
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 1200V 50A SP6
1200V (1.2kV) 50A 240 mOhm @ 25A,10V 600nC @ 10V