FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

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		Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Operating Temperature	Package / Case	Supplier Device Package	Power - Max	FET Type	FET Feature	Current - Continuous Drain (Id) @ 25°C
		Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Operating Temperature	Package / Case	Supplier Device Package	Power - Max	FET Type	FET Feature	Current - Continuous Drain (Id) @ 25°C
			SSM6L35FE,LM	Toshiba Semiconductor and Storage	4,000	3 days	-	MOSFET N/P-CH 20V 0.18A/0.1A ES6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.18A/0.1A ES6	Tape & Reel (TR)	150°C (TJ)	SOT-563，SOT-666	ES6 (1.6x1.6)	150mW	N and P-Channel	Logic Level Gate	180mA，100mA
			SSM6L35FE,LM	Toshiba Semiconductor and Storage	11,674	3 days	-	MOSFET N/P-CH 20V 0.18A/0.1A ES6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.18A/0.1A ES6	Cut Tape (CT)	150°C (TJ)	SOT-563，SOT-666	ES6 (1.6x1.6)	150mW	N and P-Channel	Logic Level Gate	180mA，100mA
			SSM6L35FE,LM	Toshiba Semiconductor and Storage	11,674	3 days	-	MOSFET N/P-CH 20V 0.18A/0.1A ES6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.18A/0.1A ES6	-	150°C (TJ)	SOT-563，SOT-666	ES6 (1.6x1.6)	150mW	N and P-Channel	Logic Level Gate	180mA，100mA
			SSM6N35FE,LM	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 20V 0.18A ES6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 0.18A ES6	Tape & Reel (TR)	150°C (TJ)	SOT-563，SOT-666	ES6 (1.6x1.6)	150mW	2 N-Channel (Dual)	Logic Level Gate	180mA
			SSM6N35FE,LM	Toshiba Semiconductor and Storage	3,846	3 days	-	MOSFET 2N-CH 20V 0.18A ES6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 0.18A ES6	Cut Tape (CT)	150°C (TJ)	SOT-563，SOT-666	ES6 (1.6x1.6)	150mW	2 N-Channel (Dual)	Logic Level Gate	180mA
			SSM6N35FE,LM	Toshiba Semiconductor and Storage	3,846	3 days	-	MOSFET 2N-CH 20V 0.18A ES6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 0.18A ES6	-	150°C (TJ)	SOT-563，SOT-666	ES6 (1.6x1.6)	150mW	2 N-Channel (Dual)	Logic Level Gate	180mA
			SSM6L35FU(TE85L,F)	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET N/P-CH 20V 0.18A/0.1A US6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.18A/0.1A US6	Tape & Reel (TR)	-55°C ~ 150°C (TJ)	6-TSSOP，SC-88，SOT-363	US6	200mW	N and P-Channel	Logic Level Gate，1.2V Drive	180mA，100mA
			SSM6L35FU(TE85L,F)	Toshiba Semiconductor and Storage	542	3 days	-	MOSFET N/P-CH 20V 0.18A/0.1A US6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.18A/0.1A US6	Cut Tape (CT)	-55°C ~ 150°C (TJ)	6-TSSOP，SC-88，SOT-363	US6	200mW	N and P-Channel	Logic Level Gate，1.2V Drive	180mA，100mA
			SSM6L35FU(TE85L,F)	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET N/P-CH 20V 0.18A/0.1A US6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.18A/0.1A US6	-	-55°C ~ 150°C (TJ)	6-TSSOP，SC-88，SOT-363	US6	200mW	N and P-Channel	Logic Level Gate，1.2V Drive	180mA，100mA

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