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- FET Feature:
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- Vgs(th) (Max) @ Id:
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Discover 7 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | ||
Toshiba Semiconductor and Storage |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.18A/0.1A ES6
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Tape & Reel (TR) | 150°C (TA) | SOT-563,SOT-666 | ES6 (1.6x1.6) | 150mW | N and P-Channel | Standard | 20V | 100mA | 1.1V @ 0.1mA | ||||
Toshiba Semiconductor and Storage |
89
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3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 0.18A/0.1A ES6
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Cut Tape (CT) | 150°C (TA) | SOT-563,SOT-666 | ES6 (1.6x1.6) | 150mW | N and P-Channel | Standard | 20V | 100mA | 1.1V @ 0.1mA | ||||
Toshiba Semiconductor and Storage |
89
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 0.18A/0.1A ES6
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- | 150°C (TA) | SOT-563,SOT-666 | ES6 (1.6x1.6) | 150mW | N and P-Channel | Standard | 20V | 100mA | 1.1V @ 0.1mA | ||||
Toshiba Semiconductor and Storage |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V/12V PS-8
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Tape & Reel (TR) | 150°C (TJ) | 8-SMD,Flat Lead | PS-8 (2.9x2.4) | 1W | N and P-Channel | Logic Level Gate | 20V,12V | 100mA,5.5A | 1.1V @ 100μA | ||||
Toshiba Semiconductor and Storage |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 0.1A US6
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Tape & Reel (TR) | 150°C (TJ) | 6-TSSOP,SC-88,SOT-363 | US6 | 200mW | 2 N-Channel (Dual) | Standard | 20V | 100mA | 1.1V @ 100μA | ||||
Toshiba Semiconductor and Storage |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 0.1A US6
|
Cut Tape (CT) | 150°C (TJ) | 6-TSSOP,SC-88,SOT-363 | US6 | 200mW | 2 N-Channel (Dual) | Standard | 20V | 100mA | 1.1V @ 100μA | ||||
Toshiba Semiconductor and Storage |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 0.1A US6
|
- | 150°C (TJ) | 6-TSSOP,SC-88,SOT-363 | US6 | 200mW | 2 N-Channel (Dual) | Standard | 20V | 100mA | 1.1V @ 100μA |