Operating Temperature:
Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id
SSM6L16FETE85LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 0.18A/0.1A ES6
Tape & Reel (TR) 150°C (TA) SOT-563,SOT-666 ES6 (1.6x1.6) 150mW N and P-Channel Standard 20V 100mA 1.1V @ 0.1mA
SSM6L16FETE85LF
Toshiba Semiconductor and Storage
89
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 0.18A/0.1A ES6
Cut Tape (CT) 150°C (TA) SOT-563,SOT-666 ES6 (1.6x1.6) 150mW N and P-Channel Standard 20V 100mA 1.1V @ 0.1mA
SSM6L16FETE85LF
Toshiba Semiconductor and Storage
89
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 0.18A/0.1A ES6
- 150°C (TA) SOT-563,SOT-666 ES6 (1.6x1.6) 150mW N and P-Channel Standard 20V 100mA 1.1V @ 0.1mA
TPCP8401(TE85L,F)
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V/12V PS-8
Tape & Reel (TR) 150°C (TJ) 8-SMD,Flat Lead PS-8 (2.9x2.4) 1W N and P-Channel Logic Level Gate 20V,12V 100mA,5.5A 1.1V @ 100μA
SSM6N16FUTE85LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.1A US6
Tape & Reel (TR) 150°C (TJ) 6-TSSOP,SC-88,SOT-363 US6 200mW 2 N-Channel (Dual) Standard 20V 100mA 1.1V @ 100μA
SSM6N16FUTE85LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.1A US6
Cut Tape (CT) 150°C (TJ) 6-TSSOP,SC-88,SOT-363 US6 200mW 2 N-Channel (Dual) Standard 20V 100mA 1.1V @ 100μA
SSM6N16FUTE85LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.1A US6
- 150°C (TJ) 6-TSSOP,SC-88,SOT-363 US6 200mW 2 N-Channel (Dual) Standard 20V 100mA 1.1V @ 100μA