Packaging:
Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package Mounting Type Power - Max FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
LKK47-06C5
IXYS
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 600V 47A ISOPLUS264
Tube -55°C ~ 150°C (TJ) ISOPLUS264? ISOPLUS264? Through Hole - 2 N-Channel (Dual) 600V 47A 45 mOhm @ 44A,10V 3.9V @ 3mA 190nC @ 10V
APTC90DDA12T1G
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 900V 30A SP1
Tray -40°C ~ 150°C (TJ) SP1 SP1 Chassis Mount 250W 2 N Channel (Dual Buck Chopper) 900V 30A 120 mOhm @ 26A,10V 3.5V @ 3mA 270nC @ 10V
APTC90DSK12T1G
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 900V 30A SP1
Tray -40°C ~ 150°C (TJ) SP1 SP1 Chassis Mount 250W 2 N Channel (Dual Buck Chopper) 900V 30A 120 mOhm @ 26A,10V 3.5V @ 3mA 270nC @ 10V
APTC90H12T2G
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 4N-CH 900V 30A SP2
Tray -40°C ~ 150°C (TJ) SP2 SP2 Chassis Mount 250W 4 N-Channel (H-Bridge) 900V 30A 120 mOhm @ 26A,10V 3.5V @ 3mA 270nC @ 10V
APTC90H12T1G
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 4N-CH 900V 30A SP1
Tray -40°C ~ 150°C (TJ) SP1 SP1 Chassis Mount 250W 4 N-Channel (H-Bridge) 900V 30A 120 mOhm @ 26A,10V 3.5V @ 3mA 270nC @ 10V
APTC90H12SCTG
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 4N-CH 900V 30A SP4
Bulk -40°C ~ 150°C (TJ) SP4 SP4 Chassis Mount 250W 4 N-Channel (H-Bridge) 900V 30A 120 mOhm @ 26A,10V 3.5V @ 3mA 270nC @ 10V