Discover 5 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
FDZ2553NZ
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 9.6A BGA
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 18-WFBGA 18-BGA (2.5x4) 2.1W 2 N-Channel (Dual) 20V 9.6A 14 mOhm @ 9.6A,4.5V 1.5V @ 250μA 18nC @ 5V
FDR8308P
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.2A SSOT-8
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SMD,Gull Wing SuperSOT?-8 800mW 2 P-Channel (Dual) 20V 3.2A 50 mOhm @ 3.2A,4.5V 1.5V @ 250μA 19nC @ 4.5V
FDR8308P
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.2A SSOT-8
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SMD,Gull Wing SuperSOT?-8 800mW 2 P-Channel (Dual) 20V 3.2A 50 mOhm @ 3.2A,4.5V 1.5V @ 250μA 19nC @ 4.5V
FDR8308P
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.2A SSOT-8
- PowerTrench -55°C ~ 150°C (TJ) 8-SMD,Gull Wing SuperSOT?-8 800mW 2 P-Channel (Dual) 20V 3.2A 50 mOhm @ 3.2A,4.5V 1.5V @ 250μA 19nC @ 4.5V
TPC8405(TE12L,Q,M)
Toshiba Semiconductor and Storage
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6A/4.5A 8SOP
Tape & Reel (TR) - 150°C (TJ) 8-SOIC (0.173",4.40mm Width) 8-SOP (5.5x6.0) 450mW N and P-Channel 30V 6A,4.5A 26 mOhm @ 3A,10V 2V @ 1mA 27nC @ 10V