- Packaging：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Power - Max：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 54 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Taiwan Semiconductor Corporation |
3,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 11.6A/9A 6TDFN
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-TDFN (2x2) | 6.25W | N and P-Channel | 20V | 11.6A (Tc)，9A (Tc) | 30 mOhm @ 6.4A，4.5V，55 mOhm @ 5A，4.5V | 1V @ 250μA | 9.1nC @ 4.5V，9.8nC @ 4.5V | 677pF @ 10V，744pF @ 10V | ||
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Taiwan Semiconductor Corporation |
5,766
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 11.6A/9A 6TDFN
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-TDFN (2x2) | 6.25W | N and P-Channel | 20V | 11.6A (Tc)，9A (Tc) | 30 mOhm @ 6.4A，4.5V，55 mOhm @ 5A，4.5V | 1V @ 250μA | 9.1nC @ 4.5V，9.8nC @ 4.5V | 677pF @ 10V，744pF @ 10V | ||
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Taiwan Semiconductor Corporation |
5,766
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 11.6A/9A 6TDFN
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- | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-TDFN (2x2) | 6.25W | N and P-Channel | 20V | 11.6A (Tc)，9A (Tc) | 30 mOhm @ 6.4A，4.5V，55 mOhm @ 5A，4.5V | 1V @ 250μA | 9.1nC @ 4.5V，9.8nC @ 4.5V | 677pF @ 10V，744pF @ 10V | ||
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Taiwan Semiconductor Corporation |
6,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 P-CH 20V 4.7A 6TDFN
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Tape & Reel (TR) | -50°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-TDFN (2x2) | 620mW | 2 P-Channel (Dual) | 20V | 4.7A (Tc) | 50 mOhm @ 3A，4.5V | 800mV @ 250μA | 9.6nC @ 4.5V | 1230pF @ 10V | ||
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Taiwan Semiconductor Corporation |
6,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 P-CH 20V 4.7A 6TDFN
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Cut Tape (CT) | -50°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-TDFN (2x2) | 620mW | 2 P-Channel (Dual) | 20V | 4.7A (Tc) | 50 mOhm @ 3A，4.5V | 800mV @ 250μA | 9.6nC @ 4.5V | 1230pF @ 10V | ||
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Taiwan Semiconductor Corporation |
6,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 P-CH 20V 4.7A 6TDFN
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- | -50°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-TDFN (2x2) | 620mW | 2 P-Channel (Dual) | 20V | 4.7A (Tc) | 50 mOhm @ 3A，4.5V | 800mV @ 250μA | 9.6nC @ 4.5V | 1230pF @ 10V | ||
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Taiwan Semiconductor Corporation |
3,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 20V 5.8A 6TDFN
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-TDFN (2x2) | 620mW | 2 N-Channel (Dual) | 20V | 5.8A (Tc) | 25 mOhm @ 4A，4.5V | 800mV @ 250μA | 7.7nC @ 4.5V | 775pF @ 10V | ||
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Taiwan Semiconductor Corporation |
5,695
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 20V 5.8A 6TDFN
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-TDFN (2x2) | 620mW | 2 N-Channel (Dual) | 20V | 5.8A (Tc) | 25 mOhm @ 4A，4.5V | 800mV @ 250μA | 7.7nC @ 4.5V | 775pF @ 10V | ||
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Taiwan Semiconductor Corporation |
5,695
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 20V 5.8A 6TDFN
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- | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-TDFN (2x2) | 620mW | 2 N-Channel (Dual) | 20V | 5.8A (Tc) | 25 mOhm @ 4A，4.5V | 800mV @ 250μA | 7.7nC @ 4.5V | 775pF @ 10V | ||
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Taiwan Semiconductor Corporation |
5,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CHANNEL 20V 6A 8SOP
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 1.6W | 2 N-Channel (Dual) | 20V | 6A (Tc) | 30 mOhm @ 6A，10V | 600mV @ 250μA | 7.1nC @ 4.5V | 562pF @ 8V | ||
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Taiwan Semiconductor Corporation |
5,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CHANNEL 20V 6A 8SOP
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 1.6W | 2 N-Channel (Dual) | 20V | 6A (Tc) | 30 mOhm @ 6A，10V | 600mV @ 250μA | 7.1nC @ 4.5V | 562pF @ 8V | ||
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Taiwan Semiconductor Corporation |
5,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CHANNEL 20V 6A 8SOP
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- | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 1.6W | 2 N-Channel (Dual) | 20V | 6A (Tc) | 30 mOhm @ 6A，10V | 600mV @ 250μA | 7.1nC @ 4.5V | 562pF @ 8V | ||
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Taiwan Semiconductor Corporation |
3,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 20V 6A 8TSSOP
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1.6W | 2 N-Channel (Dual) | 20V | 6A (Ta) | 30 mOhm @ 6A，4.5V | 600mV @ 250μA | 5nC @ 4.5V | 565pF @ 8V | ||
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Taiwan Semiconductor Corporation |
5,980
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 20V 6A 8TSSOP
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1.6W | 2 N-Channel (Dual) | 20V | 6A (Ta) | 30 mOhm @ 6A，4.5V | 600mV @ 250μA | 5nC @ 4.5V | 565pF @ 8V | ||
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Taiwan Semiconductor Corporation |
5,980
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 20V 6A 8TSSOP
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- | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1.6W | 2 N-Channel (Dual) | 20V | 6A (Ta) | 30 mOhm @ 6A，4.5V | 600mV @ 250μA | 5nC @ 4.5V | 565pF @ 8V | ||
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Taiwan Semiconductor Corporation |
2,500
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2 P-CH 30V 4.9A 8SOP
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 2.5W | 2 P-Channel (Dual) | 30V | 4.9A (Ta) | 60 mOhm @ 4.9A，10V | 3V @ 250μA | 28nC @ 10V | 745pF @ 15V | ||
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Taiwan Semiconductor Corporation |
4,880
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2 P-CH 30V 4.9A 8SOP
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 2.5W | 2 P-Channel (Dual) | 30V | 4.9A (Ta) | 60 mOhm @ 4.9A，10V | 3V @ 250μA | 28nC @ 10V | 745pF @ 15V | ||
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Taiwan Semiconductor Corporation |
4,880
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2 P-CH 30V 4.9A 8SOP
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- | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 2.5W | 2 P-Channel (Dual) | 30V | 4.9A (Ta) | 60 mOhm @ 4.9A，10V | 3V @ 250μA | 28nC @ 10V | 745pF @ 15V | ||
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Taiwan Semiconductor Corporation |
3,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 20V 6.5A 8TSSOP
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1.04W | 2 N-Channel (Dual) | 20V | 6.5A (Tc) | 22 mOhm @ 6A，4.5V | 1V @ 250μA | 15nC @ 4.5V | 950pF @ 10V | ||
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Taiwan Semiconductor Corporation |
5,980
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 20V 6.5A 8TSSOP
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1.04W | 2 N-Channel (Dual) | 20V | 6.5A (Tc) | 22 mOhm @ 6A，4.5V | 1V @ 250μA | 15nC @ 4.5V | 950pF @ 10V |
