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Discover 727 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Infineon Technologies |
21,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V SOT363
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Tape & Reel (TR) | OptiMOS | -55°C ~ 150°C (TJ) | 6-VSSOP，SC-88，SOT-363 | PG-SOT363-6 | Surface Mount | 500mW | N and P-Channel | Logic Level Gate | 20V | 950mA，530mA | 350 mOhm @ 950mA，4.5V | 1.2V @ 1.6μA | 0.34nC @ 4.5V | 47pF @ 10V | ||
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Infineon Technologies |
22,363
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V SOT363
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Cut Tape (CT) | OptiMOS | -55°C ~ 150°C (TJ) | 6-VSSOP，SC-88，SOT-363 | PG-SOT363-6 | Surface Mount | 500mW | N and P-Channel | Logic Level Gate | 20V | 950mA，530mA | 350 mOhm @ 950mA，4.5V | 1.2V @ 1.6μA | 0.34nC @ 4.5V | 47pF @ 10V | ||
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Infineon Technologies |
22,363
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V SOT363
|
- | OptiMOS | -55°C ~ 150°C (TJ) | 6-VSSOP，SC-88，SOT-363 | PG-SOT363-6 | Surface Mount | 500mW | N and P-Channel | Logic Level Gate | 20V | 950mA，530mA | 350 mOhm @ 950mA，4.5V | 1.2V @ 1.6μA | 0.34nC @ 4.5V | 47pF @ 10V | ||
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Infineon Technologies |
4,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | N and P-Channel | Logic Level Gate | 30V | 6.8A，4.6A | 27 mOhm @ 6.8A，10V | 2.3V @ 10μA | 14nC @ 10V | 398pF @ 15V | ||
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Infineon Technologies |
7,900
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | N and P-Channel | Logic Level Gate | 30V | 6.8A，4.6A | 27 mOhm @ 6.8A，10V | 2.3V @ 10μA | 14nC @ 10V | 398pF @ 15V | ||
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Infineon Technologies |
7,900
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
|
- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | N and P-Channel | Logic Level Gate | 30V | 6.8A，4.6A | 27 mOhm @ 6.8A，10V | 2.3V @ 10μA | 14nC @ 10V | 398pF @ 15V | ||
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Infineon Technologies |
20,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 1.7A MICRO8
|
Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | Micro8? | Surface Mount | 1.25W | N and P-Channel | Logic Level Gate | 20V | 2.4A，1.7A | 140 mOhm @ 1.7A，4.5V | 700mV @ 250μA | 8nC @ 4.5V | 260pF @ 15V | ||
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Infineon Technologies |
20,931
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 1.7A MICRO8
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | Micro8? | Surface Mount | 1.25W | N and P-Channel | Logic Level Gate | 20V | 2.4A，1.7A | 140 mOhm @ 1.7A，4.5V | 700mV @ 250μA | 8nC @ 4.5V | 260pF @ 15V | ||
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Infineon Technologies |
20,931
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 1.7A MICRO8
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | Micro8? | Surface Mount | 1.25W | N and P-Channel | Logic Level Gate | 20V | 2.4A，1.7A | 140 mOhm @ 1.7A，4.5V | 700mV @ 250μA | 8nC @ 4.5V | 260pF @ 15V | ||
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Infineon Technologies |
40,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 2.7A/2A MICRO8
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | Micro8? | Surface Mount | 1.25W | N and P-Channel | Logic Level Gate | 30V | 2.7A，2A | 110 mOhm @ 1.7A，10V | 1V @ 250μA | 12nC @ 10V | 210pF @ 25V | ||
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Infineon Technologies |
43,286
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 2.7A/2A MICRO8
|
Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | Micro8? | Surface Mount | 1.25W | N and P-Channel | Logic Level Gate | 30V | 2.7A，2A | 110 mOhm @ 1.7A，10V | 1V @ 250μA | 12nC @ 10V | 210pF @ 25V | ||
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Infineon Technologies |
43,286
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 2.7A/2A MICRO8
|
- | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | Micro8? | Surface Mount | 1.25W | N and P-Channel | Logic Level Gate | 30V | 2.7A，2A | 110 mOhm @ 1.7A，10V | 1V @ 250μA | 12nC @ 10V | 210pF @ 25V | ||
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Infineon Technologies |
8,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 9.7A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.7A | 15.5 mOhm @ 9.7A，10V | 2.35V @ 25μA | 9nC @ 4.5V | 760pF @ 15V | ||
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Infineon Technologies |
10,697
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 9.7A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.7A | 15.5 mOhm @ 9.7A，10V | 2.35V @ 25μA | 9nC @ 4.5V | 760pF @ 15V | ||
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Infineon Technologies |
10,697
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 9.7A 8-SOIC
|
- | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.7A | 15.5 mOhm @ 9.7A，10V | 2.35V @ 25μA | 9nC @ 4.5V | 760pF @ 15V | ||
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Infineon Technologies |
8,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 4.9A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50 mOhm @ 2.4A，10V | 1V @ 250μA | 25nC @ 10V | 520pF @ 25V | ||
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Infineon Technologies |
10,129
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 4.9A 8-SOIC
|
Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50 mOhm @ 2.4A，10V | 1V @ 250μA | 25nC @ 10V | 520pF @ 25V | ||
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Infineon Technologies |
10,129
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 4.9A 8-SOIC
|
- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Standard | 30V | 4.9A | 50 mOhm @ 2.4A，10V | 1V @ 250μA | 25nC @ 10V | 520pF @ 25V | ||
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Infineon Technologies |
8,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5.2A | 50 mOhm @ 2.6A，4.5V | 700mV @ 250μA | 20nC @ 4.5V | 660pF @ 15V | ||
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Infineon Technologies |
10,505
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 5.2A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5.2A | 50 mOhm @ 2.6A，4.5V | 700mV @ 250μA | 20nC @ 4.5V | 660pF @ 15V |
