FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	TPC8207(TE12L)	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 20V 6A 8-SOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 6A 8-SOP	-	-	150°C (TJ)	8-SOIC (0.173"，4.40mm Width)	8-SOP (5.5x6.0)	Surface Mount	450mW	2 N-Channel (Dual)	Logic Level Gate	20V	6A	20 mOhm @ 4.8A，4V	1.2V @ 200μA	22nC @ 5V	2010pF @ 10V
	TPC8208(TE12L,Q)	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 20V 5A 8-SOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 5A 8-SOP	-	-	150°C (TJ)	8-SOIC (0.173"，4.40mm Width)	8-SOP (5.5x6.0)	Surface Mount	450mW	2 N-Channel (Dual)	Logic Level Gate	20V	5A	50 mOhm @ 2.5A，4V	1.2V @ 200μA	9.5nC @ 5V	780pF @ 10V
	TPC8207(TE12L,Q)	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 20V 6A 8-SOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 6A 8-SOP	Tape & Reel (TR)	-	150°C (TJ)	8-SOIC (0.173"，4.40mm Width)	8-SOP (5.5x6.0)	Surface Mount	450mW	2 N-Channel (Dual)	Logic Level Gate	20V	6A	20 mOhm @ 4.8A，4V	1.2V @ 200μA	22nC @ 5V	2010pF @ 10V
	TPCF8201(TE85L,F,M	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 20V 3A VS-8 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 3A VS-8	Tape & Reel (TR)	-	150°C (TJ)	8-SMD，Flat Lead	VS-8 (2.9x1.5)	Surface Mount	330mW	2 N-Channel (Dual)	Logic Level Gate	20V	3A	49 mOhm @ 1.5A，4.5V	1.2V @ 200μA	7.5nC @ 5V	590pF @ 10V
	TPCF8201(TE85L,F,M	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 20V 3A VS-8 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 3A VS-8	Cut Tape (CT)	-	150°C (TJ)	8-SMD，Flat Lead	VS-8 (2.9x1.5)	Surface Mount	330mW	2 N-Channel (Dual)	Logic Level Gate	20V	3A	49 mOhm @ 1.5A，4.5V	1.2V @ 200μA	7.5nC @ 5V	590pF @ 10V
	TPCF8201(TE85L,F,M	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 20V 3A VS-8 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 3A VS-8	-	-	150°C (TJ)	8-SMD，Flat Lead	VS-8 (2.9x1.5)	Surface Mount	330mW	2 N-Channel (Dual)	Logic Level Gate	20V	3A	49 mOhm @ 1.5A，4.5V	1.2V @ 200μA	7.5nC @ 5V	590pF @ 10V
	TPCF8402(TE85L,F,M	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET N/P-CH 30V 4A/3.2A VS-8 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 4A/3.2A VS-8	Tape & Reel (TR)	-	150°C (TJ)	8-SMD，Flat Lead	VS-8 (2.9x1.5)	Surface Mount	330mW	N and P-Channel	Logic Level Gate	30V	4A，3.2A	50 mOhm @ 2A，10V	2V @ 1mA	10nC @ 10V	470pF @ 10V
	TPCF8402(TE85L,F,M	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET N/P-CH 30V 4A/3.2A VS-8 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 4A/3.2A VS-8	Cut Tape (CT)	-	150°C (TJ)	8-SMD，Flat Lead	VS-8 (2.9x1.5)	Surface Mount	330mW	N and P-Channel	Logic Level Gate	30V	4A，3.2A	50 mOhm @ 2A，10V	2V @ 1mA	10nC @ 10V	470pF @ 10V
	TPCF8402(TE85L,F,M	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET N/P-CH 30V 4A/3.2A VS-8 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 4A/3.2A VS-8	-	-	150°C (TJ)	8-SMD，Flat Lead	VS-8 (2.9x1.5)	Surface Mount	330mW	N and P-Channel	Logic Level Gate	30V	4A，3.2A	50 mOhm @ 2A，10V	2V @ 1mA	10nC @ 10V	470pF @ 10V
	TPC8208(TE12L,Q,M)	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 20V 5A SOP8 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 5A SOP8	Tape & Reel (TR)	-	150°C (TJ)	8-SOIC (0.173"，4.40mm Width)	8-SOP (5.5x6.0)	Surface Mount	450mW	2 N-Channel (Dual)	Logic Level Gate	20V	5A	50 mOhm @ 2.5A，4V	1.2V @ 200μA	9.5nC @ 5V	780pF @ 10V
	TPCF8304(TE85L,F,M	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2P-CH 30V 3.2A VS-8 MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 3.2A VS-8	Tape & Reel (TR)	-	150°C (TJ)	8-SMD，Flat Lead	VS-8 (2.9x1.5)	Surface Mount	330mW	2 P-Channel (Dual)	Logic Level Gate	30V	3.2A	72 mOhm @ 1.6A，10V	1.2V @ 1mA	14nC @ 10V	600pF @ 10V
	TPC8211(TE12L,Q,M)	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 30V 5.5A SOP8 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 5.5A SOP8	Tape & Reel (TR)	-	150°C (TJ)	8-SOIC (0.173"，4.40mm Width)	8-SOP (5.5x6.0)	Surface Mount	450mW	2 N-Channel (Dual)	Logic Level Gate	30V	5.5A	36 mOhm @ 3A，10V	2.5V @ 1mA	25nC @ 10V	1250pF @ 10V
	TPC8212-H(TE12LQ,M	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 30V 6A SOP8 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 6A SOP8	Tape & Reel (TR)	-	150°C (TJ)	8-SOIC (0.173"，4.40mm Width)	8-SOP (5.5x6.0)	Surface Mount	450mW	2 N-Channel (Dual)	Logic Level Gate	30V	6A	21 mOhm @ 3A，10V	2.3V @ 1mA	16nC @ 10V	840pF @ 10V
	TPC8213-H(TE12LQ,M	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 60V 5A SOP8 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 5A SOP8	Tape & Reel (TR)	-	150°C (TJ)	8-SOIC (0.173"，4.40mm Width)	8-SOP (5.5x6.0)	Surface Mount	450mW	2 N-Channel (Dual)	Logic Level Gate	60V	5A	50 mOhm @ 2.5A，10V	2.3V @ 1mA	11nC @ 10V	625pF @ 10V
	SSM6N7002BFU(T5L,F	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 60V 0.2A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.2A US6	Cut Tape (CT)	-	150°C (TJ)	6-TSSOP，SC-88，SOT-363	US6	Surface Mount	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA，10V	3.1V @ 250μA	-	17pF @ 25V
	SSM6N7002BFU(T5L,F	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 60V 0.2A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.2A US6	-	-	150°C (TJ)	6-TSSOP，SC-88，SOT-363	US6	Surface Mount	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA，10V	3.1V @ 250μA	-	17pF @ 25V
	TPC8221-H,LQ(S	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 30V 6A 8SOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 6A 8SOP	Tape & Reel (TR)	-	150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOP	Surface Mount	450mW	2 N-Channel (Dual)	Standard	30V	6A	25 mOhm @ 3A，10V	2.3V @ 100μA	12nC @ 10V	830pF @ 10V
	SSM6N7002BFU,LF	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 60V 0.2A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.2A US6	Tape & Reel (TR)	-	150°C (TJ)	6-TSSOP，SC-88，SOT-363	US6	Surface Mount	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA，10V	3.1V @ 250μA	-	17pF @ 25V
	SSM6N7002BFU,LF	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 60V 0.2A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.2A US6	Cut Tape (CT)	-	150°C (TJ)	6-TSSOP，SC-88，SOT-363	US6	Surface Mount	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA，10V	3.1V @ 250μA	-	17pF @ 25V
	SSM6N7002BFU,LF	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 60V 0.2A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.2A US6	-	-	150°C (TJ)	6-TSSOP，SC-88，SOT-363	US6	Surface Mount	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA，10V	3.1V @ 250μA	-	17pF @ 25V

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