Operating Temperature:
Package / Case:
Supplier Device Package:
Current - Collector (Ic) (Max):
Voltage - Collector Emitter Breakdown (Max):
Current - Collector Cutoff (Max):
IGBT Type:
Vce(on) (Max) @ Vge,Ic:
Input Capacitance (Cies) @ Vce:
NTC Thermistor:
Discover 8 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Operating Temperature Package / Case Supplier Device Package Configuration Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector Cutoff (Max) IGBT Type Vce(on) (Max) @ Vge,Ic Input Capacitance (Cies) @ Vce NTC Thermistor
VS-GA250SA60S
Vishay Semiconductor Diodes Division
272
3 days
-
MOQ: 1  MPQ: 1
IGBT 600V 400A SOT227
-40°C ~ 150°C (TJ) SOT-227-4 SOT-227 Single 400A 600V 1mA - 1.66V @ 15V,200A 16.25nF @ 30V No
APTGF150DU120TG
Microsemi Corporation
6
3 days
-
MOQ: 1  MPQ: 1
IGBT MODULE NPT DUAL 1200V SP4
- SP4 SP4 Dual,Common Source 200A 1200V 350μA NPT 3.7V @ 15V,150A 10.2nF @ 25V Yes
APTGF150A120TG
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
POWER MOD IGBT 1200V 150A SP4
- SP4 SP4 Half Bridge 200A 1200V 350μA NPT 3.7V @ 15V,150A 10.2nF @ 25V Yes
APTGF150DA120TG
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT NPT BOOST CHOP 1200V SP4
- SP4 SP4 Single 200A 1200V 350μA NPT 3.7V @ 15V,150A 10.2nF @ 25V Yes
APTGF150H120G
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT MODULE NPT FULL BRIDGE SP6
- SP6 SP6 Full Bridge Inverter 200A 1200V 350μA NPT 3.7V @ 15V,150A 10.2nF @ 25V No
APTGF150A120T3WG
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT NPT PHASE 1200V 210A SP3
- SP3 SP3 Half Bridge 210A 1200V 250μA NPT 3.7V @ 15V,150A 9.3nF @ 25V Yes
APTGF150DH120G
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT MODULE NPT ASYM BRIDGE SP6
- SP6 SP6 Asymmetrical Bridge 200A 1200V 350μA NPT 3.7V @ 15V,150A 10.2nF @ 25V No
APTGF150SK120TG
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT 1200V 200A 961W SP4
- SP4 SP4 Single 200A 1200V 350μA NPT 3.7V @ 15V,150A 10.2nF @ 25V Yes