Operating Temperature:
Supplier Device Package:
Current - Collector (Ic) (Max):
Voltage - Collector Emitter Breakdown (Max):
Current - Collector Cutoff (Max):
IGBT Type:
Input Capacitance (Cies) @ Vce:
Discover 3 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Operating Temperature Package / Case Supplier Device Package Configuration Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector Cutoff (Max) IGBT Type Vce(on) (Max) @ Vge,Ic Input Capacitance (Cies) @ Vce
VS-ETF150Y65U
Vishay Semiconductor Diodes Division
15
3 days
-
MOQ: 1  MPQ: 1
IGBT 650V 150A EMIPAK-2B
175°C (TJ) EMIPAK-2B EMIPAK-2B Three Level Inverter 142A 650V 100μA Trench 2.06V @ 15V,100A 6.6nF @ 30V
APT50GR120JD30
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT 1200V 84A 417W SOT227
-55°C ~ 150°C (TJ) SOT-227-4 SOT-227 Single 84A 1200V 1.1mA NPT 3.2V @ 15V,50A 5.55nF @ 25V
VS-GT100TP60N
Vishay Semiconductor Diodes Division
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT 600V 160A 417W INT-A-PAK
175°C (TJ) INT-A-PAK (3 + 4) INT-A-PAK Half Bridge 160A 600V 5mA Trench 2.1V @ 15V,100A 7.71nF @ 30V