- Series:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Configuration:
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- Current - Collector Cutoff (Max):
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- Vce(on) (Max) @ Vge,Ic:
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- Input Capacitance (Cies) @ Vce:
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- Selected conditions:
Discover 10 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Configuration | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge,Ic | Input Capacitance (Cies) @ Vce | NTC Thermistor | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Configuration | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge,Ic | Input Capacitance (Cies) @ Vce | NTC Thermistor | ||
Microsemi Corporation |
555
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IGBT 1200V 128A 543W SOT227
|
POWER MOS 7 | -55°C ~ 150°C (TJ) | ISOTOP | ISOTOP | Single | 128A | 1200V | 1.25mA | PT | 3.9V @ 15V,75A | 7.04nF @ 25V | No | ||||
Microsemi Corporation |
116
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IGBT MODULE 1200V 116A ISOTOP
|
- | -55°C ~ 150°C (TJ) | SOT-227-4,miniBLOC | SOT-227 | Single | 116A | 1200V | 1mA | NPT | 3.2V @ 15V,85A | 8.4nF @ 25V | No | ||||
Microsemi Corporation |
127
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IGBT 1200V 128A 543W SOT227
|
POWER MOS 7 | -55°C ~ 150°C (TJ) | ISOTOP | ISOTOP | Single | 128A | 1200V | 1mA | PT | 3.9V @ 15V,75A | 7.04nF @ 25V | No | ||||
Microsemi Corporation |
26
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IGBT MODULE 1200V 116A ISOTOP
|
- | -55°C ~ 150°C (TJ) | SOT-227-4,miniBLOC | SOT-227 | Single | 116A | 1200V | 1.1mA | NPT | 3.2V @ 15V,85A | 8.4nF @ 25V | No | ||||
Microsemi Corporation |
15
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IGBT 1200V 112A 543W SOT227
|
- | -55°C ~ 150°C (TJ) | SOT-227-4 | SOT-227 | Single | 112A | 1200V | 1.1mA | NPT | 3.2V @ 15V,70A | 7.26nF @ 25V | No | ||||
Microsemi Corporation |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT 1200V 112A 543W SOT227
|
- | -55°C ~ 150°C (TJ) | SOT-227-4 | SOT-227 | Single | 112A | 1200V | 1mA | NPT | 3.2V @ 15V,70A | 7.26nF @ 25V | No | ||||
Vishay Semiconductor Diodes Division |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
OUTPUT & SW MODULES - MTP SWITCH
|
- | 150°C (TJ) | 12-MTP Module | 12-MTP Pressfit | Dual Buck Chopper | 138A | 600V | 100μA | - | 2.48V @ 15V,80A | 14nF @ 30V | No | ||||
Vishay Semiconductor Diodes Division |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
DIODE GEN PURP
|
- | 150°C (TJ) | 12-MTP Module | 12-MTP Pressfit | Dual Buck Chopper | 138A | 600V | 100μA | - | 2.48V @ 15V,80A | 14nF @ 30V | Yes | ||||
Vishay Semiconductor Diodes Division |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT 1200V 150A 543W INT-A-PAK
|
- | 150°C (TJ) | INT-A-PAK (3 + 4) | INT-A-PAK | Half Bridge | 150A | 1200V | 5mA | - | 2.35V @ 15V,75A | 5.52nF @ 25V | No | ||||
Vishay Semiconductor Diodes Division |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT 1200V 150A 543W
|
- | 150°C (TJ) | INT-A-PAK | INT-A-PAK | Half Bridge | 150A | 1200V | 5mA | - | 2.35V @ 15V,75A | 5.52nF @ 25V | No |