Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Series Operating Temperature Package / Case Supplier Device Package Configuration Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector Cutoff (Max) IGBT Type Vce(on) (Max) @ Vge,Ic Input Capacitance (Cies) @ Vce
APT46GA90JD40
Microsemi Corporation
18
3 days
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MOQ: 1  MPQ: 1
IGBT 900V 87A 284W SOT-227
POWER MOS 8 -55°C ~ 150°C (TJ) SOT-227-4,miniBLOC ISOTOP Single 87A 900V 350μA PT 3.1V @ 15V,47A 4.17nF @ 25V
APT35GP120J
Microsemi Corporation
14
3 days
-
MOQ: 1  MPQ: 1
IGBT 1200V 64A 284W SOT227
POWER MOS 7 -55°C ~ 150°C (TJ) ISOTOP ISOTOP Single 64A 1200V 250μA PT 3.9V @ 15V,35A 3.24nF @ 25V
APT40GP60JDQ2
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
IGBT 600V 86A 284W SOT227
POWER MOS 7 -55°C ~ 150°C (TJ) SOT-227-4,miniBLOC ISOTOP Single 86A 600V 500μA PT 2.7V @ 15V,40A 4.61nF @ 25V
APT40GP90J
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
IGBT 900V 68A 284W SOT227
POWER MOS 7 -55°C ~ 150°C (TJ) SOT-227-4,miniBLOC ISOTOP Single 68A 900V 250μA PT 3.9V @ 15V,40A 3.3nF @ 25V
APT40GP90JDQ2
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
IGBT 900V 64A 284W SOT227
POWER MOS 7 -55°C ~ 150°C (TJ) ISOTOP ISOTOP Single 64A 900V 350μA PT 3.9V @ 15V,40A 3.3nF @ 25V
APT35GP120JDQ2
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
IGBT 1200V 64A 284W SOT227
POWER MOS 7 -55°C ~ 150°C (TJ) ISOTOP ISOTOP Single 64A 1200V 350μA PT 3.9V @ 15V,35A 3.24nF @ 25V
GB35XF120K
Vishay Semiconductor Diodes Division
Inquiry
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MOQ: 1  MPQ: 1
MODULE IGBT 1200V 35A ECONO2 6PK
- 150°C (TJ) ECONO2 - Three Phase Inverter 50A 1200V 100μA NPT 3V @ 15V,50A 3.475nF @ 30V