Operating Temperature:
Supplier Device Package:
Current - Collector (Ic) (Max):
Voltage - Collector Emitter Breakdown (Max):
Current - Collector Cutoff (Max):
Input Capacitance (Cies) @ Vce:
Discover 3 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Operating Temperature Package / Case Supplier Device Package Configuration Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector Cutoff (Max) IGBT Type Vce(on) (Max) @ Vge,Ic Input Capacitance (Cies) @ Vce
APTGT200TL60G
Microsemi Corporation
10
3 days
-
MOQ: 1  MPQ: 1
POWER MODULE IGBT 600V 200A SP6
-40°C ~ 175°C (TJ) SP6 SP6 Three Level Inverter 300A 600V 350μA Trench Field Stop 1.9V @ 15V,200A 12.2nF @ 25V
VS-GT140DA60U
Vishay Semiconductor Diodes Division
Inquiry
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-
MOQ: 1  MPQ: 1
IGBT 600V 200A 652W SOT-227
-40°C ~ 175°C (TJ) SOT-227-4,miniBLOC SOT-227 Single 200A 600V 100μA Trench 2V @ 15V,100A -
VS-GT100TP120N
Vishay Semiconductor Diodes Division
Inquiry
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-
MOQ: 1  MPQ: 1
IGBT 1200V 180A 652W INT-A-PAK
175°C (TJ) INT-A-PAK (3 + 4) INT-A-PAK Half Bridge 180A 1200V 5mA Trench 2.35V @ 15V,100A 12.8nF @ 30V