Supplier Device Package:
Current - Collector (Ic) (Max):
Voltage - Collector Emitter Breakdown (Max):
Current - Collector Cutoff (Max):
IGBT Type:
Vce(on) (Max) @ Vge,Ic:
Input Capacitance (Cies) @ Vce:
Discover 5 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Series Operating Temperature Supplier Device Package Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector Cutoff (Max) IGBT Type Vce(on) (Max) @ Vge,Ic Input Capacitance (Cies) @ Vce
APT65GP60J
Microsemi Corporation
10
3 days
-
MOQ: 1  MPQ: 1
IGBT 600V 130A 431W SOT227
POWER MOS 7 -55°C ~ 150°C (TJ) ISOTOP 130A 600V 1mA PT 2.7V @ 15V,65A 7.4nF @ 25V
VS-GB55LA120UX
Vishay Semiconductor Diodes Division
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT 1200V 55A LS CHOPPER SOT227
HEXFRED -40°C ~ 150°C (TJ) SOT-227 84A 1200V 50μA NPT - -
VS-GB55NA120UX
Vishay Semiconductor Diodes Division
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT 1200V 55A HS CHOPPER SOT227
HEXFRED -40°C ~ 150°C (TJ) SOT-227 84A 1200V 50μA NPT - -
VS-GB50LA120UX
Vishay Semiconductor Diodes Division
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT 1200V 84A 431W SOT-227
- -40°C ~ 150°C (TJ) SOT-227 84A 1200V 50μA NPT 2.8V @ 15V,50A -
VS-GB50NA120UX
Vishay Semiconductor Diodes Division
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT 1200V 84A 431W SOT-227
- -40°C ~ 150°C (TJ) SOT-227 84A 1200V 50μA NPT 2.8V @ 15V,50A -