- Manufacturer：
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- Operating Temperature：
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- Supplier Device Package：
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- Input：
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- Configuration：
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- Power - Max：
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- Current - Collector (Ic) (Max)：
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- Voltage - Collector Emitter Breakdown (Max)：
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- Current - Collector Cutoff (Max)：
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- IGBT Type：
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- Vce(on) (Max) @ Vge，Ic：
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- Input Capacitance (Cies) @ Vce：
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- Selected conditions:
Discover 47 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Supplier Device Package | Input | Configuration | Power - Max | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge，Ic | Input Capacitance (Cies) @ Vce | NTC Thermistor | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Supplier Device Package | Input | Configuration | Power - Max | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge，Ic | Input Capacitance (Cies) @ Vce | NTC Thermistor | |
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Microsemi Corporation |
10
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3 days |
-
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MOQ: 1 MPQ: 1
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IGBT 600V 75A 277W SOT227
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- | - | SOT-227 | Standard | Single | 277W | 75A | 600V | 40μA | NPT | 2.7V @ 15V，50A | 2.25nF @ 25V | No | ||
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STMicroelectronics |
34
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3 days |
-
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MOQ: 1 MPQ: 1
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IGBT UFAST N-CH 100A 600V ISOTOP
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PowerMESH | -55°C ~ 150°C (TJ) | ISOTOP | Standard | Single | 260W | 100A | 600V | 500μA | - | 2.6V @ 15V，40A | 4.7nF @ 25V | No | ||
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STMicroelectronics |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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IGBT N-CHAN 150A 600V ISOTOP
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PowerMESH | -55°C ~ 150°C (TJ) | ISOTOP | Standard | Single | 600W | 200A | 600V | 500μA | - | 1.6V @ 15V，100A | 1.56nF @ 25V | No | ||
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STMicroelectronics |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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IGBT 50A 600V ISOTOP
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PowerMESH | -55°C ~ 150°C (TJ) | ISOTOP | Standard | Single | 260W | 90A | 600V | 150μA | - | 2.5V @ 15V，40A | 4.55nF @ 25V | No | ||
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STMicroelectronics |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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IGBT N-CHAN 600V 50A ISOTOP
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PowerMESH | 150°C (TJ) | ISOTOP | Standard | Single | 300W | 100A | 600V | 250μA | - | 2.8V @ 15V，50A | 4.5nF @ 25V | No | ||
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Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
IGBT 1200V 72A 379W SOT227
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Thunderbolt IGBT | -55°C ~ 150°C (TJ) | ISOTOP | Standard | Single | 379W | 72A | 1200V | 400μA | NPT | 3.7V @ 15V，50A | 2.5nF @ 25V | No | ||
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Microsemi Corporation |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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IGBT 1200V 124A 379W SOT227
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- | -55°C ~ 150°C (TJ) | ISOTOP | Standard | Single | 379W | 124A | 1200V | 100μA | Trench Field Stop | 2.1V @ 15V，75A | 4.8nF @ 25V | No | ||
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Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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IGBT 600V 120A 416W SOT227
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- | - | SOT-227 | Standard | Single | 416W | 120A | 600V | 250μA | NPT | 2.5V @ 15V，100A | 12.3nF @ 25V | Yes | ||
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Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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IGBT 600V 120A 416W SOT227
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- | - | SOT-227 | Standard | Single | 416W | 120A | 600V | 100μA | NPT | 2.5V @ 15V，100A | 4.3nF @ 25V | No | ||
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Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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IGBT 600V 58A 192W SOT227
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- | - | SOT-227 | Standard | Single | 192W | 58A | 600V | 40μA | NPT | 2.5V @ 15V，30A | 1.85nF @ 25V | No | ||
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Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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IGBT 600V 75A 277W SOT227
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- | - | SOT-227 | Standard | Single | 277W | 75A | 600V | 40μA | NPT | 2.7V @ 15V，50A | 2.25nF @ 25V | No | ||
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Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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IGBT 600V 93A 378W SOT227
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- | - | SOT-227 | Standard | Single | 378W | 93A | 600V | 80μA | NPT | 2.5V @ 15V，60A | 3.59nF @ 25V | No | ||
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Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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IGBT 600V 93A 378W SOT227
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- | - | SOT-227 | Standard | Single | 378W | 93A | 600V | 80μA | NPT | 2.5V @ 15V，60A | 3.59nF @ 25V | No | ||
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Microsemi Corporation |
555
|
3 days |
-
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MOQ: 1 MPQ: 1
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IGBT 1200V 128A 543W SOT227
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POWER MOS 7 | -55°C ~ 150°C (TJ) | ISOTOP | Standard | Single | 543W | 128A | 1200V | 1.25mA | PT | 3.9V @ 15V，75A | 7.04nF @ 25V | No | |||
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Microsemi Corporation |
470
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IGBT 1200V 140A 480W SOT227
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- | -55°C ~ 150°C (TJ) | SOT-227 | Standard | Single | 480W | 140A | 1200V | 5mA | Trench Field Stop | 2.1V @ 15V，100A | 7.2nF @ 25V | No | |||
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Microsemi Corporation |
31
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IGBT 1200V 149A 625W SOT227
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- | -55°C ~ 150°C (TJ) | ISOTOP | Standard | Single | 625W | 149A | 1200V | 350μA | NPT | 3V @ 15V，100A | 7.08nF @ 25V | No | |||
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Microsemi Corporation |
127
|
3 days |
-
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MOQ: 1 MPQ: 1
|
IGBT 1200V 128A 543W SOT227
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POWER MOS 7 | -55°C ~ 150°C (TJ) | ISOTOP | Standard | Single | 543W | 128A | 1200V | 1mA | PT | 3.9V @ 15V，75A | 7.04nF @ 25V | No | |||
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Microsemi Corporation |
40
|
3 days |
-
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MOQ: 1 MPQ: 1
|
IGBT 600V 283A 682W SOT227
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- | -55°C ~ 175°C (TJ) | ISOTOP | Standard | Single | 682W | 283A | 600V | 25μA | Trench Field Stop | 1.85V @ 15V，200A | 14.1nF @ 25V | No | |||
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Microsemi Corporation |
19
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IGBT 600V 220A 536W SOT227
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- | -55°C ~ 175°C (TJ) | ISOTOP | Standard | Single | 536W | 220A | 600V | 25μA | Trench Field Stop | 1.85V @ 15V，150A | 9.2nF @ 25V | No | |||
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Microsemi Corporation |
26
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IGBT 1200V 100A 416W SOT227
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- | -55°C ~ 150°C (TJ) | SOT-227 | Standard | Single | 416W | 100A | 1200V | 5mA | Trench Field Stop | 2.1V @ 15V，75A | 5.34nF @ 25V | No |
