- Operating Temperature：
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- Configuration：
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- Power - Max：
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- Current - Collector (Ic) (Max)：
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- IGBT Type：
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- Vce(on) (Max) @ Vge，Ic：
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- Input Capacitance (Cies) @ Vce：
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- Selected conditions:
Discover 12 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Configuration | Power - Max | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge，Ic | Input Capacitance (Cies) @ Vce | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Configuration | Power - Max | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge，Ic | Input Capacitance (Cies) @ Vce | |
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 200A 658W INT-A-PAK
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-40°C ~ 150°C (TJ) | Single | 658W | 200A | 1200V | 1mA | - | 1.8V @ 15V，100A (Typ) | 7.43nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT
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-40°C ~ 150°C (TJ) | Half Bridge | 781W | 337A | 600V | 150μA | PT，Trench | 1.34V @ 15V，100A | - | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 200A 650W INT-A-PAK
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150°C (TJ) | Half Bridge | 650W | 200A | 1200V | 5mA | - | 2.2V @ 15V，100A | 7.43nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 600V 108A 390W INT-A-PAK
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-40°C ~ 150°C (TJ) | Half Bridge | 390W | 108A | 600V | 100μA | NPT | 2.85V @ 15V，100A | - | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT
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-40°C ~ 175°C (TJ) | Half Bridge | 600W | 221A | 650V | 60μA | Trench | 2.12V @ 15V，200A | - | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 1200V 182A 520W INT-A-PAK
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-40°C ~ 150°C (TJ) | Half Bridge | 520W | 182A | 1200V | 1mA | - | 3V @ 15V，100A | 18.67nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 600V 220A 780W INT-A-PAK
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-40°C ~ 150°C (TJ) | Half Bridge | 780W | 220A | 600V | 1mA | PT | 1.28V @ 15V，100A | 16.25nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 600V 480A 830W INT-A-PAK
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-40°C ~ 150°C (TJ) | Half Bridge | 830W | 480A | 600V | 1mA | - | 1.21V @ 15V，200A | 32.5nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 600V 480A 830W
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-40°C ~ 150°C (TJ) | Half Bridge | 830W | 480A | 600V | 1mA | - | 1.21V @ 15V，200A | 32.5nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 600V 220A 780W
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-40°C ~ 150°C (TJ) | Half Bridge | 780W | 220A | 600V | 1mA | PT | 1.28V @ 15V，100A | 16.25nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 1200V 150A 543W
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150°C (TJ) | Half Bridge | 543W | 150A | 1200V | 5mA | - | 2.35V @ 15V，75A | 5.52nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 1200V 150A 735W INT-A-PAK
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- | Half Bridge | 735W | 150A | 1200V | 2mA | - | 3.9V @ 15V，100A | 4.3nF @ 25V |
