- Operating Temperature：
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- Configuration：
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- Power - Max：
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- Current - Collector (Ic) (Max)：
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- IGBT Type：
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- Vce(on) (Max) @ Vge，Ic：
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- Input Capacitance (Cies) @ Vce：
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- Selected conditions:
Discover 13 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Configuration | Power - Max | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge，Ic | Input Capacitance (Cies) @ Vce | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Configuration | Power - Max | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge，Ic | Input Capacitance (Cies) @ Vce | |
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 100A 446W INT-A-PAK
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-40°C ~ 150°C (TJ) | Single | 446W | 100A | 1200V | 1mA | - | 1.7V @ 15V，50A (Typ) | 4.29nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 100A 446W INT-A-PAK
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150°C (TJ) | Half Bridge | 446W | 100A | 1200V | 5mA | - | 2.15V @ 15V，50A | 4.29nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 1200V 100A 405W INT-A-PAK
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175°C (TJ) | Half Bridge | 405W | 100A | 1200V | 5mA | Trench | 2.35V @ 15V，50A | 6.24nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 1200V 105A 500W INT-A-PAK
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-40°C ~ 150°C (TJ) | Half Bridge | 500W | 105A | 1200V | 2mA | - | 3.2V @ 15V，75A (Typ) | 4.3nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 600V 138A 500W INT-A-PAK
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150°C (TJ) | Half Bridge | 500W | 138A | 600V | 200μA | NPT | 3V @ 15V，150A | - | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 600V 209A 781W INT-A-PAK
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-40°C ~ 150°C (TJ) | Half Bridge | 781W | 209A | 600V | 200μA | NPT | 2.84V @ 15V，200A | - | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 600V 85A 208W INT-A-PAK
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175°C (TJ) | Half Bridge | 208W | 85A | 600V | 1mA | Trench | 2.1V @ 15V，50A | 3.03nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 600V 160A 417W INT-A-PAK
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175°C (TJ) | Half Bridge | 417W | 160A | 600V | 5mA | Trench | 2.1V @ 15V，100A | 7.71nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 1200V 150A 543W INT-A-PAK
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150°C (TJ) | Half Bridge | 543W | 150A | 1200V | 5mA | - | 2.35V @ 15V，75A | 5.52nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 1200V 170A 658W INT-A-PAK
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-40°C ~ 150°C (TJ) | Single | 658W | 170A | 1200V | 1mA | - | 1.82V @ 15V，75A (Typ) | 5.52nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 1200V 180A 652W INT-A-PAK
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175°C (TJ) | Half Bridge | 652W | 180A | 1200V | 5mA | Trench | 2.35V @ 15V，100A | 12.8nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 1200V 150A 446W INT-A-PAK
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-40°C ~ 150°C (TJ) | Single | 446W | 150A | 1200V | 1mA | - | 2.08V @ 15V，75A (Typ) | 9.45nF @ 30V | ||
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Infineon Technologies |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT MOD HALF BRIDGE 90A UFAST
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- | Half Bridge | 298W | 90A | 600V | 1mA | - | 3V @ 15V，90A | 5.8nF @ 30V |
