- Operating Temperature：
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- Configuration：
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- Power - Max：
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- Current - Collector (Ic) (Max)：
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- Voltage - Collector Emitter Breakdown (Max)：
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- IGBT Type：
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- Vce(on) (Max) @ Vge，Ic：
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- Input Capacitance (Cies) @ Vce：
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- Selected conditions:
Discover 26 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Package / Case | Configuration | Power - Max | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge，Ic | Input Capacitance (Cies) @ Vce | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Package / Case | Configuration | Power - Max | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge，Ic | Input Capacitance (Cies) @ Vce | |
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 300A 1389W INT-A-PAK
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-40°C ~ 150°C (TJ) | Double INT-A-PAK (3 + 4) | Single | 1389W | 300A | 1200V | 1mA | - | 1.87V @ 15V，150A (Typ) | 10.6nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 280A 1147W INT-A-PAK
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150°C (TJ) | Double INT-A-PAK (3 + 4) | Half Bridge | 1147W | 280A | 1200V | 5mA | - | 3.6V @ 15V，150A | 12.7nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 500A 1645W INT-A-PAK
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150°C (TJ) | Double INT-A-PAK (3 + 4) | Single | 1645W | 500A | 1200V | 5mA | - | 2V @ 15V，300A (Typ) | 21.2nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 500A 1645W INT-A-PAK
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150°C (TJ) | Double INT-A-PAK (3 + 4) | Single | 1645W | 500A | 1200V | 5mA | - | 2.45V @ 15V，300A | 21.2nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 550A 2841W INT-A-PAK
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150°C (TJ) | Double INT-A-PAK (5) | Single | 2841W | 550A | 1200V | 5mA | - | 3.6V @ 15V，400A | 33.7nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 341A 1042W DIAP
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-40°C ~ 150°C (TJ) | Double INT-A-PAK (3 + 8) | Half Bridge | 1042W | 341A | 1200V | 300μA | Trench | 2.17V @ 15V，300A (Typ) | 36nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 910A 3125W INT-A-PAK
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-40°C ~ 150°C (TJ) | Double INT-A-PAK (5) | Single | 3125W | 910A | 1200V | 5mA | - | 1.9V @ 15V，600A (Typ) | 41nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 800A 2604W INT-A-PAK
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-40°C ~ 150°C (TJ) | Double INT-A-PAK (3 + 4) | Half Bridge | 2604W | 800A | 1200V | 5mA | - | 1.9V @ 15V，400A (Typ) | 32.7nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 660A 2660W INT-A-PAK
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150°C (TJ) | Double INT-A-PAK (3 + 4) | Half Bridge | 2660W | 660A | 1200V | 5mA | NPT | 3.6V @ 15V，400A | 33.7nF @ 30V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 200A 833W INT-A-PAK
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150°C (TJ) | Double INT-A-PAK (3 + 4) | Single | 833W | 200A | 1200V | 5mA | - | 2.35V @ 15V，100A | 8.58nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 200A 833W INT-A-PAK
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-40°C ~ 150°C (TJ) | Double INT-A-PAK (3 + 4) | Single | 833W | 200A | 1200V | 1mA | - | 1.77V @ 15V，100A (Typ) | 8.96nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 600V 260A 1042W INT-A-PAK
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-40°C ~ 150°C (TJ) | Double INT-A-PAK (3 + 4) | Half Bridge | 1042W | 260A | 600V | 5μA | - | 1.9V @ 15V，200A (Typ) | 13.1nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 200A 833W INT-A-PAK
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150°C (TJ) | Double INT-A-PAK (3 + 4) | Half Bridge | 833W | 200A | 1200V | 5mA | - | 2.35V @ 15V，100A | 8.58nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 200A 1136W INT-A-PAK
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-40°C ~ 150°C (TJ) | Double INT-A-PAK (3 + 4) | Half Bridge | 1136W | 200A | 1200V | 5mA | NPT | 3.6V @ 15V，100A | 8.45nF @ 20V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 370A 1562W INT-A-PAK
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-40°C ~ 150°C (TJ) | Double INT-A-PAK (3 + 4) | Single | 1562W | 370A | 1200V | 100nA | - | 2.07V @ 15V，200A (Typ) | 18nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 420A 1562W INT-A-PAK
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-40°C ~ 150°C (TJ) | Double INT-A-PAK (3 + 4) | Single | 1562W | 420A | 1200V | 5mA | - | 1.8V @ 15V，200A (Typ) | 18nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 300A 1008W INT-A-PAK
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150°C (TJ) | Double INT-A-PAK (3 + 4) | Half Bridge | 1008W | 300A | 1200V | 5mA | - | 2.35V @ 15V，150A | 11nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 620A 2500W INT-A-PAK
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-40°C ~ 150°C (TJ) | Double INT-A-PAK (5) | Single | 2500W | 620A | 1200V | 5mA | - | 1.9V @ 15V，300A (Typ) | 21nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 360A 1136W INT-A-PAK
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150°C (TJ) | Double INT-A-PAK (3 + 4) | Half Bridge | 1136W | 360A | 1200V | 5mA | - | 2.35V @ 15V，200A | 14.9nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1200V 330A 1316W INT-A-PAK
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150°C (TJ) | Double INT-A-PAK (3 + 4) | Half Bridge | 1316W | 330A | 1200V | 5mA | - | 3.6V @ 15V，200A | 16.9nF @ 30V |
