- Manufacturer:
-
- Operating Temperature:
-
- Package / Case:
-
- Supplier Device Package:
-
- Configuration:
-
- Voltage - Collector Emitter Breakdown (Max):
-
- IGBT Type:
-
- Vce(on) (Max) @ Vge,Ic:
-
- Input Capacitance (Cies) @ Vce:
-
- Selected conditions:
Discover 13 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Configuration | Power - Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge,Ic | Input Capacitance (Cies) @ Vce | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Configuration | Power - Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge,Ic | Input Capacitance (Cies) @ Vce | ||
Infineon Technologies |
21
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IGBT MODULE 1200V 400A
|
C | -40°C ~ 125°C (TJ) | Module | Module | Half Bridge | 2000W | 1200V | 5mA | Trench Field Stop | 2.15V @ 15V,400A | 28nF @ 25V | ||||
Littelfuse Inc. |
19
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IGBT 1200V 580A 1925W PKG D
|
- | -40°C ~ 125°C (TJ) | Module | D3 | Half Bridge | 1925W | 1200V | 2mA | Trench Field Stop | 1.7V @ 15V,400A (Typ) | 28nF @ 25V | ||||
Infineon Technologies |
53
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IGBT MODULE 1200V 450A
|
C | -40°C ~ 150°C (TJ) | Module | Module | Half Bridge | 2400W | 1200V | 5mA | Trench Field Stop | 2.15V @ 15V,450A | 28nF @ 25V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT MODULE VCES 1200V 400A
|
- | -40°C ~ 125°C | Module | Module | Single | 2000W | 1200V | 5mA | Trench Field Stop | 2.15V @ 15V,400A | 28nF @ 25V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT MODULE VCES 650V 400A
|
- | -40°C ~ 125°C | Module | Module | Single Chopper | 2000W | 1200V | 5mA | Trench Field Stop | 2.15V @ 15V,400A | 28nF @ 25V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT MODULE VCES 650V 400A
|
- | -40°C ~ 125°C | Module | Module | Single Chopper | 2000W | 1200V | 5mA | Trench Field Stop | 2.15V @ 15V,400A | 28nF @ 25V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT MODULE VCES 650V 400A
|
- | -40°C ~ 125°C | Module | Module | 2 Independent | 2000W | 1200V | 5mA | Trench Field Stop | 2.15V @ 15V,400A | 28nF @ 25V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT MODULE VCES 650V 400A
|
- | -40°C ~ 125°C | Module | Module | 2 Independent | 2000W | 1200V | 5mA | Trench Field Stop | 2.15V @ 15V,400A | 28nF @ 25V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT MODULE VCES 650V 400A
|
- | -40°C ~ 125°C | Module | Module | 2 Independent | 2000W | 1200V | 5mA | - | 2.15V @ 15V,400A | 28nF @ 25V | ||||
Vishay Semiconductor Diodes Division |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT
|
- | -40°C ~ 150°C (TJ) | Dual INT-A-PAK (3 + 8) | Dual INT-A-PAK | Half Bridge | 1136W | 600V | 150μA | PT,Trench | 1.45V @ 15V,300A | - | ||||
Microsemi Corporation |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT 1200V 580A 2100W D3
|
- | -40°C ~ 150°C (TJ) | D-3 Module | D3 | Single | 2100W | 1200V | 750μA | Trench Field Stop | 2.1V @ 15V,400A | 29nF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT 1200V 580A 2100W D3
|
- | -40°C ~ 150°C (TJ) | D-3 Module | D3 | Single | 2100W | 1200V | 750μA | Trench Field Stop | 2.1V @ 15V,400A | 29nF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IGBT MOD TRENCH PHASE LEG D3
|
- | -40°C ~ 150°C (TJ) | D-3 Module | D3 | Half Bridge | 2100W | 1200V | 750μA | Trench Field Stop | 2.1V @ 15V,400A | 29nF @ 25V |