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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Configuration：
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- IGBT Type：
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- Vce(on) (Max) @ Vge，Ic：
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- Input Capacitance (Cies) @ Vce：
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- Selected conditions:
Discover 10 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Package / Case | Supplier Device Package | Configuration | Power - Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge，Ic | Input Capacitance (Cies) @ Vce | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Package / Case | Supplier Device Package | Configuration | Power - Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Vce(on) (Max) @ Vge，Ic | Input Capacitance (Cies) @ Vce | |
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Littelfuse Inc. |
32
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3 days |
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MOQ: 1 MPQ: 1
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IGBT MODULE PACKAGE D1200V 300A
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-40°C ~ 125°C (TJ) | D-3 Module | D3 | Half Bridge | 1450W | 1200V | 1mA | - | 1.7V @ 15V，300A | 21nF @ 25V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT MODULE VCES 600V 300A
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-40°C ~ 125°C | Module | Module | 2 Independent | 1450W | 1200V | 5mA | Trench Field Stop | 2.15V @ 15V，300A | 21nF @ 25V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOD IGBT MED PWR 62MM-2
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-40°C ~ 125°C | Module | Module | Single | 1450W | 1200V | 5mA | Trench Field Stop | 2.15V @ 15V，300A | 21nF @ 25V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT MODULE VCES 600V 300A
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-40°C ~ 125°C | Module | Module | Single | 1470W | 1200V | 5mA | - | 2.15V @ 15V，300A | 21nF @ 25V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT MODULE VCES 650V 300A
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-40°C ~ 125°C | Module | Module | Single | 1470W | 1200V | 5mA | - | 2.15V @ 15V，300A | 21nF @ 25V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT MODULE VCES 600V 300A
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-40°C ~ 125°C | Module | Module | 2 Independent | 1450W | 1200V | 5mA | - | 2.15V @ 15V，300A | 21nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 600V 480A 830W INT-A-PAK
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-40°C ~ 150°C (TJ) | INT-A-PAK | INT-A-PAK | Half Bridge | 830W | 600V | 1mA | - | 1.21V @ 15V，200A | 32.5nF @ 30V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOD IGBT 600V 300A POWIR 62
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-40°C ~ 150°C (TJ) | POWIR 62 Module | POWIR 62 | Half Bridge | 1200W | 600V | 2mA | - | 2.1V @ 15V，300A | 18.8nF @ 25V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOD IGBT 1200V 300A POWIR 62
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-40°C ~ 150°C (TJ) | POWIR 62 Module | POWIR 62 | Single | 2170W | 1200V | 3mA | - | 3.5V @ 15V，300A | 38nF @ 25V | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 600V 480A 830W
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-40°C ~ 150°C (TJ) | INT-A-PAK | INT-A-PAK | Half Bridge | 830W | 600V | 1mA | - | 1.21V @ 15V，200A | 32.5nF @ 30V |
