Package / Case:
Supplier Device Package:
Voltage - Collector Emitter Breakdown (Max):
Current - Collector Cutoff (Max):
Input Capacitance (Cies) @ Vce:
Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Operating Temperature Package / Case Supplier Device Package Configuration Power - Max Voltage - Collector Emitter Breakdown (Max) Current - Collector Cutoff (Max) IGBT Type Vce(on) (Max) @ Vge,Ic Input Capacitance (Cies) @ Vce
FF300R12KE3HOSA1
Infineon Technologies
10
3 days
-
MOQ: 1  MPQ: 1
IGBT MODULE VCES 600V 300A
-40°C ~ 125°C Module Module 2 Independent 1450W 1200V 5mA Trench Field Stop 2.15V @ 15V,300A 21nF @ 25V
FF300R17KE4HOSA1
Infineon Technologies
Inquiry
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-
MOQ: 1  MPQ: 1
IGBT MODULE VCES 600V 300A
-40°C ~ 150°C Module Module 2 Independent 1800W 1700V 1mA Trench Field Stop 2.3V @ 15V,300A 24.5nF @ 25V
BSM300GA170DN2HOSA1
Infineon Technologies
Inquiry
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-
MOQ: 1  MPQ: 1
MODULE IGBT 1700V
150°C (TJ) Module Module Single 2500W 1700V 3mA - 3.9V @ 15V,300A -
FF300R12KE3B2HOSA1
Infineon Technologies
Inquiry
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-
MOQ: 1  MPQ: 1
MOD IGBT MED PWR 62MM-1
-40°C ~ 125°C Module Module Half Bridge 1450W 1200V 5mA Trench Field Stop 2.15V @ 15V,300A 21nF @ 25V
APTGT300A120D3G
Microsemi Corporation
Inquiry
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-
MOQ: 1  MPQ: 1
IGBT MODULE TRENCH PHASE LEG D3
-40°C ~ 150°C (TJ) D-3 Module D3 Half Bridge 1250W 1200V 8mA Trench Field Stop 2.1V @ 15V,300A 20nF @ 25V
APTGT300DA120D3G
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
IGBT 1200V 440A 1250W D3
-40°C ~ 150°C (TJ) D-3 Module D3 Single 1250W 1200V 8mA Trench Field Stop 2.1V @ 15V,300A 20nF @ 25V
APTGT300SK120D3G
Microsemi Corporation
Inquiry
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-
MOQ: 1  MPQ: 1
IGBT 1200V 440A 1250W D3
-40°C ~ 150°C (TJ) D-3 Module D3 Single 1250W 1200V 8mA Trench Field Stop 2.1V @ 15V,300A 20nF @ 25V