Series:
Package / Case:
Supplier Device Package:
Power - Max:
Voltage - Collector Emitter Breakdown (Max):
Current - Collector Cutoff (Max):
Vce(on) (Max) @ Vge,Ic:
Input Capacitance (Cies) @ Vce:
Discover 3 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Series Operating Temperature Package / Case Supplier Device Package Configuration Power - Max Voltage - Collector Emitter Breakdown (Max) Current - Collector Cutoff (Max) IGBT Type Vce(on) (Max) @ Vge,Ic Input Capacitance (Cies) @ Vce
FF450R12KE4HOSA1
Infineon Technologies
10
3 days
-
MOQ: 1  MPQ: 1
IGBT MODULE 1200V 450A
C -40°C ~ 150°C (TJ) Module Module Half Bridge 2400W 1200V 5mA Trench Field Stop 2.15V @ 15V,450A 28nF @ 25V
APTGF330A60D3G
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT NPT PHASE 600V 520A D3
- - D-3 Module D3 Half Bridge 1560W 600V 500μA NPT 2.45V @ 15V,400A 18nF @ 25V
FF450R12KE4EHOSA1
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
IGBT MODULE VCES 600V 450A
- -40°C ~ 150°C Module Module 2 Independent 2400W 1200V 5mA Trench Field Stop 2.15V @ 15V,450A 28nF @ 25V