- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Configuration：
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- IGBT Type：
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- Input Capacitance (Cies) @ Vce：
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- Selected conditions:
Discover 13 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Configuration | Power - Max | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | IGBT Type | Input Capacitance (Cies) @ Vce | NTC Thermistor | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Configuration | Power - Max | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | IGBT Type | Input Capacitance (Cies) @ Vce | NTC Thermistor | |
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Infineon Technologies |
21
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3 days |
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MOQ: 1 MPQ: 1
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IGBT MODULE 1200V 400A
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C | -40°C ~ 125°C (TJ) | Module | Module | Half Bridge | 2000W | 580A | 5mA | Trench Field Stop | 28nF @ 25V | No | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOD IGBT MED PWR 62MM-2
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- | -40°C ~ 125°C | Module | Module | Single | 2250W | 650A | 5mA | - | 28nF @ 25V | No | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOD IGBT MED PWR 62MM-2
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- | -40°C ~ 125°C | Module | Module | Single | 2250W | 650A | 5mA | - | 28nF @ 25V | No | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT MODULE VCES 1200V 400A
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- | -40°C ~ 125°C | Module | Module | Single | 2000W | 580A | 5mA | Trench Field Stop | 28nF @ 25V | No | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT MODULE VCES 650V 400A
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- | -40°C ~ 125°C | Module | Module | Single Chopper | 2000W | 580A | 5mA | Trench Field Stop | 28nF @ 25V | No | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT MODULE VCES 650V 400A
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- | -40°C ~ 125°C | Module | Module | Single Chopper | 2000W | 580A | 5mA | Trench Field Stop | 28nF @ 25V | No | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT MODULE VCES 650V 400A
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- | -40°C ~ 125°C | Module | Module | 2 Independent | 2000W | 580A | 5mA | Trench Field Stop | 28nF @ 25V | No | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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IGBT MODULE VCES 650V 400A
|
- | -40°C ~ 125°C | Module | Module | 2 Independent | 2000W | 580A | 5mA | Trench Field Stop | 28nF @ 25V | No | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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IGBT MODULE VCES 650V 400A
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- | -40°C ~ 125°C | Module | Module | 2 Independent | 2000W | 580A | 5mA | - | 28nF @ 25V | No | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOD IGBT MED PWR 62MM-1
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C | -40°C ~ 125°C | Module | Module | Half Bridge | - | 400A | 5mA | Trench Field Stop | 28nF @ 25V | No | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT MODULE VCES 650V 400A
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- | -40°C ~ 150°C | Module | Module | Three Phase Inverter | 2150W | 600A | 1mA | - | 25nF @ 25V | Yes | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOD IGBT MED POWER ECONO4-1
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- | -40°C ~ 150°C | Module | Module | Full Bridge | 20mW | 800A | 1mA | - | 25nF @ 25V | Yes | ||
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Vishay Semiconductor Diodes Division |
Inquiry
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-
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MOQ: 1 MPQ: 1
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IGBT 1200V 600A 2119W DIAP
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- | 150°C (TJ) | Double INT-A-PAK (3 + 8) | Double INT-A-PAK | Half Bridge | 2119W | 600A | 5mA | Trench | 28.8nF @ 25V | No |
