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Discover 4 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Configuration | Power - Max | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Input Capacitance (Cies) @ Vce | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Configuration | Power - Max | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Cutoff (Max) | IGBT Type | Input Capacitance (Cies) @ Vce | |
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Vishay Semiconductor Diodes Division |
6
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANSISTOR INSLTED GATE BIPOLAR
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- | -40°C ~ 150°C (TJ) | SOT-227-4 | SOT-227 | Single | 862W | 149A | 1200V | 250μA | NPT | - | ||
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Microsemi Corporation |
555
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3 days |
-
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MOQ: 1 MPQ: 1
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IGBT 1200V 128A 543W SOT227
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POWER MOS 7 | -55°C ~ 150°C (TJ) | ISOTOP | ISOTOP | Single | 543W | 128A | 1200V | 1.25mA | PT | 7.04nF @ 25V | |||
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Microsemi Corporation |
127
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3 days |
-
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MOQ: 1 MPQ: 1
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IGBT 1200V 128A 543W SOT227
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POWER MOS 7 | -55°C ~ 150°C (TJ) | ISOTOP | ISOTOP | Single | 543W | 128A | 1200V | 1mA | PT | 7.04nF @ 25V | |||
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Infineon Technologies |
Inquiry
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MOQ: 1 MPQ: 1
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IGBT 1700V 110A 625W MODULE
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- | 150°C (TJ) | Module | Module | Half Bridge | 625W | 110A | 1700V | - | - | 11nF @ 25V |
