- Packaging：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Current - Drain (Idss) @ Vds (Vgs=0)：
-
- Voltage - Cutoff (VGS off) @ Id：
-
- Selected conditions:
Discover 9 products
 |
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Input Capacitance (Ciss) (Max) @ Vds | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Input Capacitance (Ciss) (Max) @ Vds | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | |
|
Toshiba Semiconductor and Storage |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
JFET N-CH 0.1W USM
|
Tape & Reel (TR) | 8.2pF @ 10V | - | 1.2mA @ 10V | 400mV @ 100nA | |||
|
|
Toshiba Semiconductor and Storage |
12
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
JFET N-CH 0.1W USM
|
Cut Tape (CT) | 8.2pF @ 10V | - | 1.2mA @ 10V | 400mV @ 100nA | |||
|
|
Toshiba Semiconductor and Storage |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
JFET N-CH 0.1W USM
|
- | 8.2pF @ 10V | - | 1.2mA @ 10V | 400mV @ 100nA | |||
|
|
Toshiba Semiconductor and Storage |
42,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
JFET N-CH 50V 0.1W USM
|
Tape & Reel (TR) | 13pF @ 10V | 50V | 1.2mA @ 10V | 1.5V @ 100nA | |||
|
|
Toshiba Semiconductor and Storage |
4,580
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
JFET N-CH 50V 0.1W USM
|
Cut Tape (CT) | 13pF @ 10V | 50V | 1.2mA @ 10V | 1.5V @ 100nA | |||
|
|
Toshiba Semiconductor and Storage |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
JFET N-CH 50V 0.1W USM
|
- | 13pF @ 10V | 50V | 1.2mA @ 10V | 1.5V @ 100nA | |||
|
|
Toshiba Semiconductor and Storage |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
JFET N-CH 0.1W USM
|
Tape & Reel (TR) | 8.2pF @ 10V | - | 2.6mA @ 10V | 400mV @ 100nA | |||
|
|
Toshiba Semiconductor and Storage |
565
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
JFET N-CH 0.1W USM
|
Cut Tape (CT) | 8.2pF @ 10V | - | 2.6mA @ 10V | 400mV @ 100nA | |||
|
|
Toshiba Semiconductor and Storage |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
JFET N-CH 0.1W USM
|
- | 8.2pF @ 10V | - | 2.6mA @ 10V | 400mV @ 100nA |
