- Interface：
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- Package / Case：
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- Supplier Device Package：
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- Features：
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- Configuration：
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- Temperature Coefficient (Typ)：
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Discover 25 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Interface | Package / Case | Supplier Device Package | Number of Circuits | Features | Configuration | Number of Taps | Resistance (Ohms) | Tolerance | Temperature Coefficient (Typ) | Resistance - Wiper (Ohms) (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Interface | Package / Case | Supplier Device Package | Number of Circuits | Features | Configuration | Number of Taps | Resistance (Ohms) | Tolerance | Temperature Coefficient (Typ) | Resistance - Wiper (Ohms) (Typ) | |
|
|
|
Maxim Integrated |
14,103
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL DUAL 256-TAP 16-TQFN
|
SPI | 16-WFQFN Exposed Pad | 16-TQFN (3x3) | 2 | - | Potentiometer | 256 | 10k | ±25% | 35 ppm/°C | 325 | ||
|
|
|
Maxim Integrated |
3,386
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 32-TAP NV SOT23-8
|
Up/Down (U/D，CS) | SOT-23-8 | SOT-23-8 | 1 | - | Potentiometer | 32 | 50k | - | 35 ppm/°C | 600 | ||
|
|
|
Maxim Integrated |
14,211
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 32TAP NV TSOT23-6
|
I2C | SOT-23-6 Thin，TSOT-23-6 | TSOT-23-6 | 1 | - | Rheostat | 32 | 50k | ±25% | 35 ppm/°C | 610 | ||
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|
|
Maxim Integrated |
3,221
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 256-TAP NV 8-TDFN
|
SPI | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 1 | - | Potentiometer | 256 | 50k | - | 35 ppm/°C | 325 | ||
|
|
|
Maxim Integrated |
4,675
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL DUAL 256-TAP 16-TQFN
|
I2C | 16-WFQFN Exposed Pad | 16-TQFN (3x3) | 2 | able Address | Potentiometer | 256 | 50k | ±25% | 70 ppm/°C | 325 | ||
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|
|
Maxim Integrated |
4,993
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 32TAP NV TSOT23-6
|
Up/Down (U/D，CS) | SOT-23-6 Thin，TSOT-23-6 | TSOT-23-6 | 1 | - | Potentiometer | 32 | 50k | - | 35 ppm/°C | - | ||
|
|
|
Maxim Integrated |
4,320
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 32-TAP NV I2C 8-TDFN
|
I2C | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 1 | able Address | Potentiometer | 32 | 50k | ±25% | 35 ppm/°C | 610 | ||
|
|
|
Maxim Integrated |
2,407
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 32-TAP NV I2C 8-TDFN
|
I2C | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 1 | able Address | Potentiometer | 32 | 100k | ±25% | 35 ppm/°C | 610 | ||
|
|
|
Maxim Integrated |
1,091
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 32TAP NV TSOT23-6
|
I2C | SOT-23-6 Thin，TSOT-23-6 | TSOT-23-6 | 1 | - | Rheostat | 32 | 100k | ±25% | 35 ppm/°C | 610 | ||
|
|
|
Maxim Integrated |
320
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 256-TAP NV 8-TDFN
|
SPI | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 1 | - | Potentiometer | 256 | 100k | - | 35 ppm/°C | 325 | ||
|
|
|
Maxim Integrated |
1,587
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 256-TAP NV 8-TDFN
|
SPI | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 1 | - | Potentiometer | 256 | 200k | - | 35 ppm/°C | 325 | ||
|
|
|
Maxim Integrated |
3,036
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 256-TAP I2C 8-TDFN
|
I2C | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 1 | able Address | Potentiometer | 256 | 100k | ±25% | 35 ppm/°C | 325 | ||
|
|
|
Maxim Integrated |
2,465
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 256-TAP I2C 8-TDFN
|
I2C | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 1 | able Address | Potentiometer | 256 | 50k | ±25% | 35 ppm/°C | 325 | ||
|
|
|
Maxim Integrated |
1,455
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 256-TAP I2C 8-TDFN
|
I2C | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 1 | able Address | Potentiometer | 256 | 200k | ±25% | 35 ppm/°C | 325 | ||
|
|
|
Maxim Integrated |
556
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC DGTL POT 256POS 50K 8TDFN
|
I2C | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 1 | able Address | Potentiometer | 256 | 50k | ±25% | 35 ppm/°C | 325 | ||
|
|
|
Maxim Integrated |
188
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 256-TAP I2C 8-TDFN
|
I2C | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 1 | able Address | Potentiometer | 256 | 100k | ±25% | 35 ppm/°C | 325 | ||
|
|
|
Maxim Integrated |
894
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 32TAP NV TSOT23-6
|
Up/Down (U/D，CS) | SOT-23-6 Thin，TSOT-23-6 | TSOT-23-6 | 1 | - | Potentiometer | 32 | 100k | - | 35 ppm/°C | - | ||
|
|
|
Maxim Integrated |
882
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 32-TAP NV I2C 8-TDFN
|
I2C | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | 1 | able Address | Potentiometer | 32 | 50k | ±25% | 35 ppm/°C | 610 | ||
|
|
|
Maxim Integrated |
692
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL LP 128TAP 8-UDFN
|
Up/Down (UP，DN) | 8-WFDFN | 8-uDFN (2x2) | 1 | - | Potentiometer | 128 | 22k | - | 50 ppm/°C | 600 | ||
|
|
|
Maxim Integrated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC POT DGTL 32TAP NV TSOT23-6
|
I2C | SOT-23-6 Thin，TSOT-23-6 | TSOT-23-6 | 1 | - | Rheostat | 32 | 50k | ±25% | 35 ppm/°C | 610 |
