Supplier Device Package:
Number of Circuits:
-3db Bandwidth:
On-State Resistance (Max):
Charge Injection:
Current - Leakage (IS(off)) (Max):
Voltage - Supply, Single (V+):
Voltage - Supply, Dual (V±):
Switch Time (Ton, Toff) (Max):
Channel Capacitance (CS(off), CD(off)):
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Supplier Device Package Number of Circuits -3db Bandwidth On-State Resistance (Max) Charge Injection Current - Leakage (IS(off)) (Max) Crosstalk Voltage - Supply, Single (V+) Voltage - Supply, Dual (V±) Switch Time (Ton, Toff) (Max) Channel Capacitance (CS(off), CD(off))
TS3A5018RSVR
Texas Instruments
42,000
3 days
-
MOQ: 3000  MPQ: 1
IC SWITCH QUAD SPDT 16UQFN
Tape & Reel (TR) -40°C ~ 85°C (TA) 16-UQFN (2.6x1.8) 4 300MHz 10 Ohm 2pC 100nA -48dB @ 10MHz 1.65 V ~ 3.6 V - 8ns,6.5ns 4.5pF,9pF
TS3A5018RSVR
Texas Instruments
46,165
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH QUAD SPDT 16UQFN
Cut Tape (CT) -40°C ~ 85°C (TA) 16-UQFN (2.6x1.8) 4 300MHz 10 Ohm 2pC 100nA -48dB @ 10MHz 1.65 V ~ 3.6 V - 8ns,6.5ns 4.5pF,9pF
TS3A5018RSVR
Texas Instruments
46,165
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH QUAD SPDT 16UQFN
- -40°C ~ 85°C (TA) 16-UQFN (2.6x1.8) 4 300MHz 10 Ohm 2pC 100nA -48dB @ 10MHz 1.65 V ~ 3.6 V - 8ns,6.5ns 4.5pF,9pF
DG636EEN-T1-GE4
Vishay Siliconix
Inquiry
-
-
MOQ: 3000  MPQ: 1
IC ANALOG SWITCH 16MINIQFN
Tape & Reel (TR) -40°C ~ 125°C (TA) 16-miniQFN (1.8x2.6) 2 700MHz 96 Ohm -0.33pC 1nA -62dB @ 1MHz 3 V ~ 16 V ±3 V ~ 8 V 46ns,55ns 3.7pF,4.4pF
DG636EEN-T1-GE4
Vishay Siliconix
786
3 days
-
MOQ: 1  MPQ: 1
IC ANALOG SWITCH 16MINIQFN
Cut Tape (CT) -40°C ~ 125°C (TA) 16-miniQFN (1.8x2.6) 2 700MHz 96 Ohm -0.33pC 1nA -62dB @ 1MHz 3 V ~ 16 V ±3 V ~ 8 V 46ns,55ns 3.7pF,4.4pF
DG636EEN-T1-GE4
Vishay Siliconix
786
3 days
-
MOQ: 1  MPQ: 1
IC ANALOG SWITCH 16MINIQFN
- -40°C ~ 125°C (TA) 16-miniQFN (1.8x2.6) 2 700MHz 96 Ohm -0.33pC 1nA -62dB @ 1MHz 3 V ~ 16 V ±3 V ~ 8 V 46ns,55ns 3.7pF,4.4pF