Operating Temperature:
-3db Bandwidth:
On-State Resistance (Max):
Channel-to-Channel Matching (ΔRon):
Charge Injection:
Current - Leakage (IS(off)) (Max):
Switch Time (Ton, Toff) (Max):
Channel Capacitance (CS(off), CD(off)):
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature -3db Bandwidth On-State Resistance (Max) Channel-to-Channel Matching (ΔRon) Charge Injection Current - Leakage (IS(off)) (Max) Crosstalk Switch Time (Ton, Toff) (Max) Channel Capacitance (CS(off), CD(off))
DG3257DN-T1-GE4
Vishay Siliconix
3,000
3 days
-
MOQ: 3000  MPQ: 1
IC ANALOG SWITCH 6UDFN
Tape & Reel (TR) -40°C ~ 85°C (TA) 714MHz 6 Ohm 600 mOhm 4pC - -32dB @ 240MHz 50ns,45ns 3pF,9pF
DG3257DN-T1-GE4
Vishay Siliconix
3,608
3 days
-
MOQ: 1  MPQ: 1
IC ANALOG SWITCH 6UDFN
Cut Tape (CT) -40°C ~ 85°C (TA) 714MHz 6 Ohm 600 mOhm 4pC - -32dB @ 240MHz 50ns,45ns 3pF,9pF
DG3257DN-T1-GE4
Vishay Siliconix
3,608
3 days
-
MOQ: 1  MPQ: 1
IC ANALOG SWITCH 6UDFN
- -40°C ~ 85°C (TA) 714MHz 6 Ohm 600 mOhm 4pC - -32dB @ 240MHz 50ns,45ns 3pF,9pF
DG4157EDN-T1-GE4
Vishay Siliconix
Inquiry
-
-
MOQ: 3000  MPQ: 1
IC ANALOG SWITCH 6MICRODFN
Tape & Reel (TR) -40°C ~ 85°C 152MHz 1.2 Ohm 120 mOhm (Max) -5pC 3nA -41dB @ 10MHz 32ns,28ns -
DG4157EDN-T1-GE4
Vishay Siliconix
2,800
3 days
-
MOQ: 1  MPQ: 1
IC ANALOG SWITCH 6MICRODFN
Cut Tape (CT) -40°C ~ 85°C 152MHz 1.2 Ohm 120 mOhm (Max) -5pC 3nA -41dB @ 10MHz 32ns,28ns -
DG4157EDN-T1-GE4
Vishay Siliconix
2,800
3 days
-
MOQ: 1  MPQ: 1
IC ANALOG SWITCH 6MICRODFN
- -40°C ~ 85°C 152MHz 1.2 Ohm 120 mOhm (Max) -5pC 3nA -41dB @ 10MHz 32ns,28ns -