-3db Bandwidth:
On-State Resistance (Max):
Charge Injection:
Current - Leakage (IS(off)) (Max):
Crosstalk:
Voltage - Supply, Single (V+):
Switch Time (Ton, Toff) (Max):
Channel Capacitance (CS(off), CD(off)):
Discover 15 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package -3db Bandwidth On-State Resistance (Max) Charge Injection Current - Leakage (IS(off)) (Max) Crosstalk Voltage - Supply, Single (V+) Switch Time (Ton, Toff) (Max) Channel Capacitance (CS(off), CD(off))
NX3DV3899GU,115
NXP USA Inc.
32,000
3 days
-
MOQ: 4000  MPQ: 1
IC ANLG SWITCH DPDT 16XQFN
Tape & Reel (TR) -40°C ~ 125°C (TA) 16-XFQFN 16-XQFN (1.8x2.6) 200MHz 3.3 Ohm 4pC 5nA -90dB @ 1MHz 1.4 V ~ 4.3 V 40ns,20ns 8pF
NX3DV3899GU,115
NXP USA Inc.
34,449
3 days
-
MOQ: 1  MPQ: 1
IC ANLG SWITCH DPDT 16XQFN
Cut Tape (CT) -40°C ~ 125°C (TA) 16-XFQFN 16-XQFN (1.8x2.6) 200MHz 3.3 Ohm 4pC 5nA -90dB @ 1MHz 1.4 V ~ 4.3 V 40ns,20ns 8pF
NX3DV3899GU,115
NXP USA Inc.
34,449
3 days
-
MOQ: 1  MPQ: 1
IC ANLG SWITCH DPDT 16XQFN
- -40°C ~ 125°C (TA) 16-XFQFN 16-XQFN (1.8x2.6) 200MHz 3.3 Ohm 4pC 5nA -90dB @ 1MHz 1.4 V ~ 4.3 V 40ns,20ns 8pF
NX3DV3899HR,115
NXP USA Inc.
Inquiry
-
-
MOQ: 1500  MPQ: 1
IC ANLG SWITCH DPDT 16-HXQFN
Tape & Reel (TR) -40°C ~ 125°C (TA) 16-XFQFN Exposed Pad 16-HXQFN (3x3) 200MHz 3.3 Ohm 4pC 5nA -90dB @ 1MHz 1.4 V ~ 4.3 V 40ns,20ns 8pF
NX3DV3899HR,115
NXP USA Inc.
2,039
3 days
-
MOQ: 1  MPQ: 1
IC ANLG SWITCH DPDT 16-HXQFN
Cut Tape (CT) -40°C ~ 125°C (TA) 16-XFQFN Exposed Pad 16-HXQFN (3x3) 200MHz 3.3 Ohm 4pC 5nA -90dB @ 1MHz 1.4 V ~ 4.3 V 40ns,20ns 8pF
NX3DV3899HR,115
NXP USA Inc.
2,039
3 days
-
MOQ: 1  MPQ: 1
IC ANLG SWITCH DPDT 16-HXQFN
- -40°C ~ 125°C (TA) 16-XFQFN Exposed Pad 16-HXQFN (3x3) 200MHz 3.3 Ohm 4pC 5nA -90dB @ 1MHz 1.4 V ~ 4.3 V 40ns,20ns 8pF
NLAS3899BMNTBG
ON Semiconductor
6,000
3 days
-
MOQ: 3000  MPQ: 1
IC SWITCH DUAL DPDT 16WQFN
Tape & Reel (TR) -40°C ~ 85°C (TA) 16-WFQFN 16-WQFN (1.8x2.6) 280MHz 2.5 Ohm 111pC 300nA - 1.65 V ~ 4.3 V 40ns,30ns 10pF
NLAS3899BMNTBG
ON Semiconductor
6,313
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL DPDT 16WQFN
Cut Tape (CT) -40°C ~ 85°C (TA) 16-WFQFN 16-WQFN (1.8x2.6) 280MHz 2.5 Ohm 111pC 300nA - 1.65 V ~ 4.3 V 40ns,30ns 10pF
NLAS3899BMNTBG
ON Semiconductor
6,313
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL DPDT 16WQFN
- -40°C ~ 85°C (TA) 16-WFQFN 16-WQFN (1.8x2.6) 280MHz 2.5 Ohm 111pC 300nA - 1.65 V ~ 4.3 V 40ns,30ns 10pF
NLAS3899BMNTWG
ON Semiconductor
3,000
3 days
-
MOQ: 3000  MPQ: 1
IC SWITCH DUAL DPDT 16WQFN
Tape & Reel (TR) -40°C ~ 85°C (TA) 16-VFQFN Exposed Pad 16-QFN (3x3) 280MHz 2.5 Ohm 111pC 300nA - 1.65 V ~ 4.3 V 40ns,30ns 10pF
NLAS3899BMNTWG
ON Semiconductor
5,900
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL DPDT 16WQFN
Cut Tape (CT) -40°C ~ 85°C (TA) 16-VFQFN Exposed Pad 16-QFN (3x3) 280MHz 2.5 Ohm 111pC 300nA - 1.65 V ~ 4.3 V 40ns,30ns 10pF
NLAS3899BMNTWG
ON Semiconductor
5,900
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL DPDT 16WQFN
- -40°C ~ 85°C (TA) 16-VFQFN Exposed Pad 16-QFN (3x3) 280MHz 2.5 Ohm 111pC 300nA - 1.65 V ~ 4.3 V 40ns,30ns 10pF
NLAS3899BMNTXG
ON Semiconductor
Inquiry
-
-
MOQ: 3000  MPQ: 1
IC SWITCH DUAL DPDT 16QFN
Tape & Reel (TR) -40°C ~ 85°C (TA) 16-VFQFN Exposed Pad 16-QFN (3x3) 280MHz 2.5 Ohm 111pC 300nA - 1.65 V ~ 4.3 V 40ns,30ns 10pF
NLAS3899BMNTXG
ON Semiconductor
2,858
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL DPDT 16QFN
Cut Tape (CT) -40°C ~ 85°C (TA) 16-VFQFN Exposed Pad 16-QFN (3x3) 280MHz 2.5 Ohm 111pC 300nA - 1.65 V ~ 4.3 V 40ns,30ns 10pF
NLAS3899BMNTXG
ON Semiconductor
2,858
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL DPDT 16QFN
- -40°C ~ 85°C (TA) 16-VFQFN Exposed Pad 16-QFN (3x3) 280MHz 2.5 Ohm 111pC 300nA - 1.65 V ~ 4.3 V 40ns,30ns 10pF