Supplier Device Package:
-3db Bandwidth:
On-State Resistance (Max):
Charge Injection:
Current - Leakage (IS(off)) (Max):
Voltage - Supply, Single (V+):
Switch Time (Ton, Toff) (Max):
Channel Capacitance (CS(off), CD(off)):
Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Supplier Device Package -3db Bandwidth On-State Resistance (Max) Charge Injection Current - Leakage (IS(off)) (Max) Crosstalk Voltage - Supply, Single (V+) Switch Time (Ton, Toff) (Max) Channel Capacitance (CS(off), CD(off))
TS3A24159DRCR
Texas Instruments
15,000
3 days
-
MOQ: 3000  MPQ: 1
IC SWITCH DUAL SPDT 10SON
Tape & Reel (TR) 10-VSON (3x3) 23MHz 300 mOhm 9pC 10nA -96dB @ 1MHz 1.65 V ~ 3.6 V 35ns,25ns 90pF
TS3A24159DRCR
Texas Instruments
18,798
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL SPDT 10SON
Cut Tape (CT) 10-VSON (3x3) 23MHz 300 mOhm 9pC 10nA -96dB @ 1MHz 1.65 V ~ 3.6 V 35ns,25ns 90pF
TS3A24159DRCR
Texas Instruments
18,798
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL SPDT 10SON
- 10-VSON (3x3) 23MHz 300 mOhm 9pC 10nA -96dB @ 1MHz 1.65 V ~ 3.6 V 35ns,25ns 90pF
DG2517EDN-T1-GE4
Vishay Siliconix
Inquiry
-
-
MOQ: 2500  MPQ: 1
IC SWITCH DUAL SPDT 10DFN
Tape & Reel (TR) 10-DFN (3x3) 221MHz 3.1 Ohm -19.4pC - -62dB @ 1MHz 1.8 V ~ 5.5 V 40ns,33ns -
DG2517EDN-T1-GE4
Vishay Siliconix
2,464
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL SPDT 10DFN
Cut Tape (CT) 10-DFN (3x3) 221MHz 3.1 Ohm -19.4pC - -62dB @ 1MHz 1.8 V ~ 5.5 V 40ns,33ns -
DG2517EDN-T1-GE4
Vishay Siliconix
2,464
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL SPDT 10DFN
- 10-DFN (3x3) 221MHz 3.1 Ohm -19.4pC - -62dB @ 1MHz 1.8 V ~ 5.5 V 40ns,33ns -
TS3A24159DRCRG4
Texas Instruments
Inquiry
-
-
MOQ: 3000  MPQ: 1
IC SWITCH DUAL SPDT 10SON
Tape & Reel (TR) 10-VSON (3x3) 23MHz 300 mOhm 9pC 10nA -96dB @ 1MHz 1.65 V ~ 3.6 V 35ns,25ns 90pF