-3db Bandwidth:
On-State Resistance (Max):
Channel-to-Channel Matching (ΔRon):
Charge Injection:
Current - Leakage (IS(off)) (Max):
Voltage - Supply, Single (V+):
Voltage - Supply, Dual (V±):
Switch Time (Ton, Toff) (Max):
Channel Capacitance (CS(off), CD(off)):
Discover 12 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package -3db Bandwidth On-State Resistance (Max) Channel-to-Channel Matching (ΔRon) Charge Injection Current - Leakage (IS(off)) (Max) Voltage - Supply, Single (V+) Voltage - Supply, Dual (V±) Switch Time (Ton, Toff) (Max) Channel Capacitance (CS(off), CD(off))
DG2032EDN-T1-GE4
Vishay Siliconix
Inquiry
-
-
MOQ: 2500  MPQ: 1
IC ANALOG SWITCH DUAL 12QFN
Tape & Reel (TR) -40°C ~ 85°C (TA) 12-VFQFN Exposed Pad 12-QFN (3x3) 221MHz 3.1 Ohm 10 mOhm -19.4pC - 1.8 V ~ 5.5 V - 40ns,33ns -
DG2032EDN-T1-GE4
Vishay Siliconix
2,392
3 days
-
MOQ: 1  MPQ: 1
IC ANALOG SWITCH DUAL 12QFN
Cut Tape (CT) -40°C ~ 85°C (TA) 12-VFQFN Exposed Pad 12-QFN (3x3) 221MHz 3.1 Ohm 10 mOhm -19.4pC - 1.8 V ~ 5.5 V - 40ns,33ns -
DG2032EDN-T1-GE4
Vishay Siliconix
2,392
3 days
-
MOQ: 1  MPQ: 1
IC ANALOG SWITCH DUAL 12QFN
- -40°C ~ 85°C (TA) 12-VFQFN Exposed Pad 12-QFN (3x3) 221MHz 3.1 Ohm 10 mOhm -19.4pC - 1.8 V ~ 5.5 V - 40ns,33ns -
DG2517EDN-T1-GE4
Vishay Siliconix
Inquiry
-
-
MOQ: 2500  MPQ: 1
IC SWITCH DUAL SPDT 10DFN
Tape & Reel (TR) -40°C ~ 85°C (TA) 10-VFDFN Exposed Pad 10-DFN (3x3) 221MHz 3.1 Ohm 10 mOhm -19.4pC - 1.8 V ~ 5.5 V - 40ns,33ns -
DG2517EDN-T1-GE4
Vishay Siliconix
2,464
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL SPDT 10DFN
Cut Tape (CT) -40°C ~ 85°C (TA) 10-VFDFN Exposed Pad 10-DFN (3x3) 221MHz 3.1 Ohm 10 mOhm -19.4pC - 1.8 V ~ 5.5 V - 40ns,33ns -
DG2517EDN-T1-GE4
Vishay Siliconix
2,464
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL SPDT 10DFN
- -40°C ~ 85°C (TA) 10-VFDFN Exposed Pad 10-DFN (3x3) 221MHz 3.1 Ohm 10 mOhm -19.4pC - 1.8 V ~ 5.5 V - 40ns,33ns -
DG2517EDQ-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 2500  MPQ: 1
IC SWITCH DUAL SPDT 10MSOP
Tape & Reel (TR) -40°C ~ 85°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP 221MHz 3.1 Ohm 10 mOhm -19.4pC - 1.8 V ~ 5.5 V - 40ns,33ns -
DG2517EDQ-T1-GE3
Vishay Siliconix
1,433
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL SPDT 10MSOP
Cut Tape (CT) -40°C ~ 85°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP 221MHz 3.1 Ohm 10 mOhm -19.4pC - 1.8 V ~ 5.5 V - 40ns,33ns -
DG2517EDQ-T1-GE3
Vishay Siliconix
1,433
3 days
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL SPDT 10MSOP
- -40°C ~ 85°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP 221MHz 3.1 Ohm 10 mOhm -19.4pC - 1.8 V ~ 5.5 V - 40ns,33ns -
DG636EEN-T1-GE4
Vishay Siliconix
Inquiry
-
-
MOQ: 3000  MPQ: 1
IC ANALOG SWITCH 16MINIQFN
Tape & Reel (TR) -40°C ~ 125°C (TA) 16-UFQFN 16-miniQFN (1.8x2.6) 700MHz 96 Ohm 300 mOhm -0.33pC 1nA 3 V ~ 16 V ±3 V ~ 8 V 46ns,55ns 3.7pF,4.4pF
DG636EEN-T1-GE4
Vishay Siliconix
786
3 days
-
MOQ: 1  MPQ: 1
IC ANALOG SWITCH 16MINIQFN
Cut Tape (CT) -40°C ~ 125°C (TA) 16-UFQFN 16-miniQFN (1.8x2.6) 700MHz 96 Ohm 300 mOhm -0.33pC 1nA 3 V ~ 16 V ±3 V ~ 8 V 46ns,55ns 3.7pF,4.4pF
DG636EEN-T1-GE4
Vishay Siliconix
786
3 days
-
MOQ: 1  MPQ: 1
IC ANALOG SWITCH 16MINIQFN
- -40°C ~ 125°C (TA) 16-UFQFN 16-miniQFN (1.8x2.6) 700MHz 96 Ohm 300 mOhm -0.33pC 1nA 3 V ~ 16 V ±3 V ~ 8 V 46ns,55ns 3.7pF,4.4pF