Memory - Zui Ai Technology（Taiwan）Company.

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Write Cycle Time - Word, Page：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Supplier Device Package	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface	Write Cycle Time - Word, Page
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Supplier Device Package	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface	Write Cycle Time - Word, Page
	W9725G6KB-25 TR	Winbond Electronics	2,500	3 days	-	IC DRAM 256M PARALLEL 84WBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 84WBGA	Tape & Reel (TR)	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-WBGA (8x12.5)	256Mb (16M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	W9725G6KB-25 TR	Winbond Electronics	3,360	3 days	-	IC DRAM 256M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 84WBGA	Cut Tape (CT)	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-WBGA (8x12.5)	256Mb (16M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	W9725G6KB-25 TR	Winbond Electronics	3,360	3 days	-	IC DRAM 256M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 84WBGA	-	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-WBGA (8x12.5)	256Mb (16M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	W9751G6KB-25	Winbond Electronics	20,933	3 days	-	IC DRAM 512M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-WBGA (8x12.5)	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	MT47H32M16NF-25E IT:H TR	Micron Technology Inc.	6,000	3 days	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 2000 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	Tape & Reel (TR)	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	84-FBGA (8x12.5)	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	MT47H32M16NF-25E IT:H TR	Micron Technology Inc.	7,562	3 days	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	Cut Tape (CT)	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	84-FBGA (8x12.5)	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	MT47H32M16NF-25E IT:H TR	Micron Technology Inc.	7,562	3 days	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	84-FBGA (8x12.5)	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	AS4C128M16D2-25BIN	Alliance Memory，Inc.	331	3 days	-	IC DRAM 2G PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 84FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-FBGA (10.5x13.5)	2Gb (128M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	-	Parallel	15ns
	MT47H128M16RT-25E:C	Micron Technology Inc.	1,247	3 days	-	IC DRAM 2G PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 84FBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-FBGA (9x12.5)	2Gb (128M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	MT47H128M16RT-25E IT:C	Micron Technology Inc.	4,868	3 days	-	IC DRAM 2G PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 84FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-FBGA (9x12.5)	2Gb (128M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	W9725G6KB-25	Winbond Electronics	3,533	3 days	-	IC DRAM 256M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-WBGA (8x12.5)	256Mb (16M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	W9751G6KB25I	Winbond Electronics	700	3 days	-	IC DRAM 512M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-WBGA (8x12.5)	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	W971GG6SB-25	Winbond Electronics	838	3 days	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-WBGA (8x12.5)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	IS43DR16640C-25DBL	ISSI，Integrated Silicon Solution Inc	1,149	3 days	-	IC DRAM 1G PARALLEL 84TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84TWBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-TWBGA (8x12.5)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ns	Parallel	15ns
	AS4C32M16D2A-25BIN	Alliance Memory，Inc.	444	3 days	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-FBGA (8x12.5)	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	IS43DR16640B-25DBL	ISSI，Integrated Silicon Solution Inc	615	3 days	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	84-WBGA (8x12.5)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	W971GG6SB25I	Winbond Electronics	812	3 days	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-WBGA (8x12.5)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	AS4C64M16D2A-25BIN	Alliance Memory，Inc.	653	3 days	-	IC DRAM 1G PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84FBGA	Bulk	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-FBGA (8x12.5)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	IS43DR16640C-3DBLI	ISSI，Integrated Silicon Solution Inc	1,340	3 days	-	IC DRAM 1G PARALLEL 84TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84TWBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	84-TWBGA (8x12.5)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	333MHz	450ns	Parallel	15ns
	IS43DR16640B-25DBLI	ISSI，Integrated Silicon Solution Inc	635	3 days	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	84-WBGA (8x12.5)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns

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