Memory - Zui Ai Technology（Taiwan）Company.

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Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Supplier Device Package	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Supplier Device Package	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	AS4C16M16MD1-6BCN	Alliance Memory，Inc.	701	3 days	-	IC DRAM 256M PARALLEL 60FPBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 60FPBGA	Tray	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TJ)	60-FPBGA (8x9)	256Mb (16M x 16)	Volatile	SDRAM - Mobile LPDDR	DRAM	166MHz	-	15ns
	AS4C128M8D2-25BIN	Alliance Memory，Inc.	2,279	3 days	-	IC DRAM 1G PARALLEL 60FBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	60-FBGA (8x10)	1Gb (128M x 8)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns
	MT46V16M16CY-5B IT:M	Micron Technology Inc.	1,794	3 days	-	IC DRAM 256M PARALLEL 60FBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 60FBGA	Tray	-	2.5 V ~ 2.7 V	-40°C ~ 85°C (TA)	60-FBGA (8x12.5)	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	15ns
	MT47H256M8EB-25E:C	Micron Technology Inc.	559	3 days	-	IC DRAM 2G PARALLEL 60FBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60FBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA (9x11.5)	2Gb (256M x 8)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns
	MT47H256M8EB-25E IT:C	Micron Technology Inc.	642	3 days	-	IC DRAM 2G PARALLEL 60FBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	60-FBGA (9x11.5)	2Gb (256M x 8)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns
	AS4C64M8D2-25BIN	Alliance Memory，Inc.	528	3 days	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	60-FBGA (8x10)	512Mb (64M x 8)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns
	W94AD6KBHX5I	Winbond Electronics	2,207	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	Tray	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TC)	60-VFBGA (8x9)	1Gb (64M x 16)	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5ns	15ns
	MT46V16M16CY-5B IT:M TR	Micron Technology Inc.	3,000	3 days	-	IC DRAM 256M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 60FBGA	Tape & Reel (TR)	-	2.5 V ~ 2.7 V	-40°C ~ 85°C (TA)	60-FBGA (8x12.5)	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	15ns
	IS43DR82560C-25DBL	ISSI，Integrated Silicon Solution Inc	234	3 days	-	IC DRAM 2G PARALLEL 60TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60TWBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-TWBGA (8x10.5)	2Gb (256M x 8)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns
	IS43LR16320B-6BLI	ISSI，Integrated Silicon Solution Inc	205	3 days	-	IC DRAM 512M PARALLEL 60TFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60TFBGA	Tray	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-TFBGA (8x10)	512Mb (32M x 16)	Volatile	SDRAM - Mobile LPDDR	DRAM	166MHz	5.5ns	12ns
	IS43R16160F-6BLI	ISSI，Integrated Silicon Solution Inc	190	3 days	-	IC DRAM 256M PARALLEL 60TFBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 60TFBGA	Tray	-	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	60-TFBGA (13x8)	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	15ns
	W9751G8KB-25	Winbond Electronics	107	3 days	-	IC DRAM 512M PARALLEL 60WBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60WBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-WBGA (8x12.5)	512Mb (64M x 8)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns
	W947D6HBHX5E	Winbond Electronics	245	3 days	-	IC DRAM 128M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 60VFBGA	Tray	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TC)	60-VFBGA (8x9)	128Mb (8M x 16)	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5ns	15ns
	W947D6HBHX5I	Winbond Electronics	212	3 days	-	IC DRAM 128M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 60VFBGA	Tray	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	128Mb (8M x 16)	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5ns	15ns
	IS43DR86400E-25DBL	ISSI，Integrated Silicon Solution Inc	147	3 days	-	IC DRAM 512M PARALLEL 60TWBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60TWBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-TWBGA (8x10.5)	512Mb (64M x 8)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ns	15ns
	W971GG8SB-25	Winbond Electronics	133	3 days	-	IC DRAM 1G PARALLEL 60WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60WBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-WBGA (8x12.5)	1Gb (128M x 8)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	15ns
	W949D6DBHX5I	Winbond Electronics	318	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	Tray	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	512Mb (32M x 16)	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5ns	15ns
	AS4C16M16D1-5BCN	Alliance Memory，Inc.	192	3 days	-	IC DRAM 256M PARALLEL 60TFBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 60TFBGA	Tray	-	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	60-TFBGA (8x13)	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	15ns
	IS43DR81280C-25DBL	ISSI，Integrated Silicon Solution Inc	210	3 days	-	IC DRAM 1G PARALLEL 60TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60TWBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-TWBGA (8x10.5)	1Gb (128M x 8)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns
	AS4C64M8D2-25BCN	Alliance Memory，Inc.	307	3 days	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	60-FBGA (8x10)	512Mb (64M x 8)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns

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