Memory - Zui Ai Technology（Taiwan）Company.

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Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Voltage - Supply	Operating Temperature	Supplier Device Package	Memory Size	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Voltage - Supply	Operating Temperature	Supplier Device Package	Memory Size	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	MT46H32M16LFBF-5 IT:C	Micron Technology Inc.	17,277	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	512Mb (32M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns
	MT46H64M16LFBF-5 IT:B TR	Micron Technology Inc.	3,000	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	1Gb (64M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns
	MT46H64M16LFBF-5 IT:B TR	Micron Technology Inc.	3,784	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	Cut Tape (CT)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	1Gb (64M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns
	MT46H64M16LFBF-5 IT:B TR	Micron Technology Inc.	3,784	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	1Gb (64M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns
	MT46H128M16LFDD-48 IT:C TR	Micron Technology Inc.	1,000	3 days	-	IC DRAM 2G PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 2G PARALLEL 60VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	2Gb (128M x 16)	SDRAM - Mobile LPDDR	208MHz	5.0ns	14.4ns
	MT46H128M16LFDD-48 IT:C TR	Micron Technology Inc.	1,644	3 days	-	IC DRAM 2G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60VFBGA	Cut Tape (CT)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	2Gb (128M x 16)	SDRAM - Mobile LPDDR	208MHz	5.0ns	14.4ns
	MT46H128M16LFDD-48 IT:C TR	Micron Technology Inc.	1,644	3 days	-	IC DRAM 2G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60VFBGA	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	2Gb (128M x 16)	SDRAM - Mobile LPDDR	208MHz	5.0ns	14.4ns
	AS4C32M16MD1A-5BCN	Alliance Memory，Inc.	169	3 days	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	1.7 V ~ 1.9 V	-30°C ~ 85°C (TJ)	60-FBGA (9x8)	512Mb (32M x 16)	SDRAM - Mobile LPDDR	200MHz	700ps	15ns
	MT46H32M16LFBF-5 AIT:C TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	512Mb (32M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns
	MT46H32M16LFBF-5 AIT:C TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	Cut Tape (CT)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	512Mb (32M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns
	MT46H32M16LFBF-5 AIT:C TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	512Mb (32M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns
	MT46H64M16LFBF-5 AIT:B TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	1Gb (64M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns
	MT46H64M16LFBF-5 AIT:B TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	Cut Tape (CT)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	1Gb (64M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns
	MT46H64M16LFBF-5 AIT:B TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	1Gb (64M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns
	MT46H128M16LFDD-48 AIT:C TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 2G PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 2G PARALLEL 60VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	2Gb (128M x 16)	SDRAM - Mobile LPDDR	208MHz	5.0ns	14.4ns
	MT46H128M16LFDD-48 AIT:C TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 2G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60VFBGA	Cut Tape (CT)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	2Gb (128M x 16)	SDRAM - Mobile LPDDR	208MHz	5.0ns	14.4ns
	MT46H128M16LFDD-48 AIT:C TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 2G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60VFBGA	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	2Gb (128M x 16)	SDRAM - Mobile LPDDR	208MHz	5.0ns	14.4ns
	MT46H32M16LFBF-5 IT:C TR	Micron Technology Inc.	Inquiry	-	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	512Mb (32M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns
	MT46H32M16LFBF-5 IT:C TR	Micron Technology Inc.	293	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	Cut Tape (CT)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	512Mb (32M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns
	MT46H32M16LFBF-5 IT:C TR	Micron Technology Inc.	293	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA (8x9)	512Mb (32M x 16)	SDRAM - Mobile LPDDR	200MHz	5.0ns	15ns