Discover 33 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Operating Temperature Memory Size Memory Type Technology Memory Format Access Time Write Cycle Time - Word, Page
X28HC64D-90
Renesas Electronics America Inc.
Inquiry
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MOQ: 30  MPQ: 1
IC EEPROM 64K PARALLEL 28CERDIP
0°C ~ 70°C (TA) 64K (8K x 8) Non-Volatile EEPROM EEPROM 90ns 5ms
71256L45DB
IDT,Integrated Device Technology Inc
612
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 256K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM 45ns 45ns
71256L70DB
IDT,Integrated Device Technology Inc
65
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 256K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM 70ns 70ns
5962-8855202XA
IDT,Integrated Device Technology Inc
46
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 256K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM - -
5962-3829407MXA
IDT,Integrated Device Technology Inc
Inquiry
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-
MOQ: 1  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - -
7164S100DB
IDT,Integrated Device Technology Inc
Inquiry
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 100ns 100ns
7164S25DB
IDT,Integrated Device Technology Inc
Inquiry
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 25ns 25ns
7164S35DB
IDT,Integrated Device Technology Inc
Inquiry
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 35ns 35ns
7164S45DB
IDT,Integrated Device Technology Inc
Inquiry
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 45ns 45ns
7164S55DB
IDT,Integrated Device Technology Inc
Inquiry
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 55ns 55ns
7164S70DB
IDT,Integrated Device Technology Inc
Inquiry
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 70ns 70ns
7164S85DB
IDT,Integrated Device Technology Inc
Inquiry
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 85ns 85ns
7164L100DB
IDT,Integrated Device Technology Inc
Inquiry
-
-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 100ns 100ns
7164L20DB
IDT,Integrated Device Technology Inc
Inquiry
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 20ns 20ns
7164L25DB
IDT,Integrated Device Technology Inc
Inquiry
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 25ns 25ns
7164L35DB
IDT,Integrated Device Technology Inc
Inquiry
-
-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 35ns 35ns
7164L45DB
IDT,Integrated Device Technology Inc
Inquiry
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 45ns 45ns
7164L55DB
IDT,Integrated Device Technology Inc
Inquiry
-
-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 55ns 55ns
7164L85DB
IDT,Integrated Device Technology Inc
Inquiry
-
-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 85ns 85ns
7164S20DB
IDT,Integrated Device Technology Inc
Inquiry
-
-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CERDIP
-55°C ~ 125°C (TA) 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM 20ns 20ns