Memory Format:
Clock Frequency:
Memory Interface:
Discover 610 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Voltage - Supply Operating Temperature Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Memory Interface Write Cycle Time - Word, Page
AS6C1616-55TIN
Alliance Memory,Inc.
786
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 16M PARALLEL 48TSOP I
Tray - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 16Mb (1M x 16) Volatile SRAM - Asynchronous SRAM - 55ns Parallel 55ns
IS61WV102416BLL-10TLI
ISSI,Integrated Silicon Solution Inc
9,843
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 16M PARALLEL 48TSOP I
Tray - 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 16Mb (1M x 16) Volatile SRAM - Asynchronous SRAM - 10ns Parallel 10ns
AS7C316098A-10TIN
Alliance Memory,Inc.
496
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 16M PARALLEL 48TSOP I
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 16Mb (1M x 16) Volatile SRAM - Asynchronous SRAM - 10ns Parallel 10ns
AS6C3216A-55TIN
Alliance Memory,Inc.
407
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 32M PARALLEL 48TSOP I
Tray - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 32Mb (2M x 16) Volatile SRAM - Asynchronous SRAM - 55ns Parallel 55ns
IS61WV204816BLL-10TLI
ISSI,Integrated Silicon Solution Inc
986
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 32M PARALLEL 48TSOP I
Bulk - 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 32Mb (2M x 16) Volatile SRAM - Asynchronous SRAM - 10ns Parallel 10ns
AS6C6416-55TIN
Alliance Memory,Inc.
538
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 64M PARALLEL 48TSOP I
Tray - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 64Mb (4M x 16) Volatile SRAM - Asynchronous SRAM - 55ns Parallel 55ns
IS61WV102416DBLL-10TLI
ISSI,Integrated Silicon Solution Inc
210
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 16M PARALLEL 48TSOP I
Tray - 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 16Mb (1M x 16) Volatile SRAM - Asynchronous SRAM - 10ns Parallel 10ns
RMLV0816BGSA-4S2#AA0
Renesas Electronics America
288
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 8M PARALLEL 48TSOP
Tray - 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 8Mb (1M x 8,512K x 16) Volatile SRAM SRAM - 45ns Parallel 45ns
RMLV1616AGSA-5S2#AA0
Renesas Electronics America
321
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 16M PARALLEL 48TSOP
Tube - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 16Mb (2M x 8,1M x 16) Volatile SRAM SRAM - 55ns Parallel 55ns
TH58BVG2S3HTA00
Toshiba Memory America,Inc.
192
3 days
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 48TSOP I
Tray Benand 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 4Gb (512M x 8) Non-Volatile FLASH - NAND (SLC) Flash - 25ns Parallel 25ns
TH58NVG2S3HTA00
Toshiba Memory America,Inc.
187
3 days
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 48TSOP I
Tray - 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 4Gb (512M x 8) Non-Volatile FLASH - NAND (SLC) Flash - 25ns Parallel 25ns
TH58BVG2S3HTAI0
Toshiba Memory America,Inc.
182
3 days
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 48TSOP I
Tray Benand 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 4Gb (512M x 8) Non-Volatile FLASH - NAND (SLC) Flash - 25ns Parallel 25ns
TH58NVG5S0FTA20
Toshiba Memory America,Inc.
480
3 days
-
MOQ: 1  MPQ: 1
IC FLASH 32G PARALLEL 48TSOP I
Tray - 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 32Gb (4G x 8) Non-Volatile FLASH - NAND (SLC) Flash - 25ns Parallel 25ns
RMLV0816BGSA-4S2#KA0
Renesas Electronics America
Inquiry
-
-
MOQ: 1000  MPQ: 1
IC SRAM 8M PARALLEL 48TSOP
Tape & Reel (TR) - 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 8Mb (1M x 8,512K x 16) Volatile SRAM SRAM - 45ns Parallel 45ns
RMLV0816BGSA-4S2#KA0
Renesas Electronics America
900
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 8M PARALLEL 48TSOP
Cut Tape (CT) - 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 8Mb (1M x 8,512K x 16) Volatile SRAM SRAM - 45ns Parallel 45ns
RMLV0816BGSA-4S2#KA0
Renesas Electronics America
900
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 8M PARALLEL 48TSOP
- - 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 8Mb (1M x 8,512K x 16) Volatile SRAM SRAM - 45ns Parallel 45ns
RMLV1616AGSA-5S2#KA0
Renesas Electronics America
Inquiry
-
-
MOQ: 1000  MPQ: 1
IC SRAM 16M PARALLEL 48TSOP
Tape & Reel (TR) - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 16Mb (2M x 8,1M x 16) Volatile SRAM SRAM - 55ns Parallel 55ns
RMLV1616AGSA-5S2#KA0
Renesas Electronics America
990
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 16M PARALLEL 48TSOP
Cut Tape (CT) - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 16Mb (2M x 8,1M x 16) Volatile SRAM SRAM - 55ns Parallel 55ns
RMLV1616AGSA-5S2#KA0
Renesas Electronics America
990
3 days
-
MOQ: 1  MPQ: 1
IC SRAM 16M PARALLEL 48TSOP
- - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 16Mb (2M x 8,1M x 16) Volatile SRAM SRAM - 55ns Parallel 55ns
R1LV3216RSA-5SI#S1
Renesas Electronics America
1,000
3 days
-
MOQ: 1000  MPQ: 1
IC SRAM 32M PARALLEL 48TSOP I
Tape & Reel (TR) - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 32Mb (4M x 8,2M x 16) Volatile SRAM SRAM - 55ns Parallel 55ns