Memory - Zui Ai Technology（Taiwan）Company.

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Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Operating Temperature	Memory Size	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Operating Temperature	Memory Size	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	MT46H32M16LFBF-5 IT:C	Micron Technology Inc.	17,277	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	Tray	-40°C ~ 85°C (TA)	512Mb (32M x 16)	200MHz	5.0ns	15ns
	MT46H64M16LFBF-5 IT:B TR	Micron Technology Inc.	3,000	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	Tape & Reel (TR)	-40°C ~ 85°C (TA)	1Gb (64M x 16)	200MHz	5.0ns	15ns
	MT46H64M16LFBF-5 IT:B TR	Micron Technology Inc.	3,784	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	Cut Tape (CT)	-40°C ~ 85°C (TA)	1Gb (64M x 16)	200MHz	5.0ns	15ns
	MT46H64M16LFBF-5 IT:B TR	Micron Technology Inc.	3,784	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	-	-40°C ~ 85°C (TA)	1Gb (64M x 16)	200MHz	5.0ns	15ns
	MT46H128M16LFDD-48 IT:C TR	Micron Technology Inc.	1,000	3 days	-	IC DRAM 2G PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 2G PARALLEL 60VFBGA	Tape & Reel (TR)	-40°C ~ 85°C (TA)	2Gb (128M x 16)	208MHz	5.0ns	14.4ns
	MT46H128M16LFDD-48 IT:C TR	Micron Technology Inc.	1,644	3 days	-	IC DRAM 2G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60VFBGA	Cut Tape (CT)	-40°C ~ 85°C (TA)	2Gb (128M x 16)	208MHz	5.0ns	14.4ns
	MT46H128M16LFDD-48 IT:C TR	Micron Technology Inc.	1,644	3 days	-	IC DRAM 2G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60VFBGA	-	-40°C ~ 85°C (TA)	2Gb (128M x 16)	208MHz	5.0ns	14.4ns
	MT46H32M16LFBF-5 AIT:C TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	Tape & Reel (TR)	-40°C ~ 85°C (TA)	512Mb (32M x 16)	200MHz	5.0ns	15ns
	MT46H32M16LFBF-5 AIT:C TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	Cut Tape (CT)	-40°C ~ 85°C (TA)	512Mb (32M x 16)	200MHz	5.0ns	15ns
	MT46H32M16LFBF-5 AIT:C TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	-	-40°C ~ 85°C (TA)	512Mb (32M x 16)	200MHz	5.0ns	15ns
	MT46H64M16LFBF-5 AIT:B TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	Tape & Reel (TR)	-40°C ~ 85°C (TA)	1Gb (64M x 16)	200MHz	5.0ns	15ns
	MT46H64M16LFBF-5 AIT:B TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	Cut Tape (CT)	-40°C ~ 85°C (TA)	1Gb (64M x 16)	200MHz	5.0ns	15ns
	MT46H64M16LFBF-5 AIT:B TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	-	-40°C ~ 85°C (TA)	1Gb (64M x 16)	200MHz	5.0ns	15ns
	MT46H128M16LFDD-48 AIT:C TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 2G PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 2G PARALLEL 60VFBGA	Tape & Reel (TR)	-40°C ~ 85°C (TA)	2Gb (128M x 16)	208MHz	5.0ns	14.4ns
	MT46H128M16LFDD-48 AIT:C TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 2G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60VFBGA	Cut Tape (CT)	-40°C ~ 85°C (TA)	2Gb (128M x 16)	208MHz	5.0ns	14.4ns
	MT46H128M16LFDD-48 AIT:C TR	Micron Technology Inc.	2,000	3 days	-	IC DRAM 2G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60VFBGA	-	-40°C ~ 85°C (TA)	2Gb (128M x 16)	208MHz	5.0ns	14.4ns
	MT46H32M16LFBF-5 IT:C TR	Micron Technology Inc.	Inquiry	-	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	Tape & Reel (TR)	-40°C ~ 85°C (TA)	512Mb (32M x 16)	200MHz	5.0ns	15ns
	MT46H32M16LFBF-5 IT:C TR	Micron Technology Inc.	293	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	Cut Tape (CT)	-40°C ~ 85°C (TA)	512Mb (32M x 16)	200MHz	5.0ns	15ns
	MT46H32M16LFBF-5 IT:C TR	Micron Technology Inc.	293	3 days	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	-	-40°C ~ 85°C (TA)	512Mb (32M x 16)	200MHz	5.0ns	15ns
	MT46H32M16LFBF-6 AAT:C TR	Micron Technology Inc.	Inquiry	-	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	Tape & Reel (TR)	-40°C ~ 105°C (TA)	512Mb (32M x 16)	166MHz	5.0ns	15ns

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