Discover 44 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Voltage - Supply Operating Temperature Memory Size Technology Clock Frequency Access Time Write Cycle Time - Word, Page
AS4C512M16D3L-12BCN
Alliance Memory,Inc.
1,305
3 days
-
MOQ: 1  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 8Gb (512M x 16) SDRAM - DDR3L 800MHz 13.75ns 15ns
AS4C512M16D3L-12BIN
Alliance Memory,Inc.
1,627
3 days
-
MOQ: 1  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 8Gb (512M x 16) SDRAM - DDR3L 800MHz 13.75ns 15ns
MT40A256M16GE-083E AUT:B
Micron Technology Inc.
741
3 days
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Tray 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz - -
MT40A256M16GE-083E AUT:B TR
Micron Technology Inc.
Inquiry
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Tape & Reel (TR) 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz - -
MT40A256M16GE-083E AUT:B TR
Micron Technology Inc.
1,388
3 days
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Cut Tape (CT) 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz - -
MT40A256M16GE-083E AUT:B TR
Micron Technology Inc.
1,388
3 days
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
- 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz - -
MT40A256M16GE-083E AAT:B TR
Micron Technology Inc.
Inquiry
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Tape & Reel (TR) 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz - -
MT40A256M16GE-083E AAT:B TR
Micron Technology Inc.
1,950
3 days
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Cut Tape (CT) 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz - -
MT40A256M16GE-083E AAT:B TR
Micron Technology Inc.
1,950
3 days
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
- 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz - -
MT41K512M16HA-125:A TR
Micron Technology Inc.
Inquiry
-
-
MOQ: 2000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 8Gb (512M x 16) SDRAM - DDR3L 800MHz 13.5ns -
MT41K512M16HA-125:A TR
Micron Technology Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Cut Tape (CT) 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 8Gb (512M x 16) SDRAM - DDR3L 800MHz 13.5ns -
MT41K512M16HA-125:A TR
Micron Technology Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
- 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 8Gb (512M x 16) SDRAM - DDR3L 800MHz 13.5ns -
MT40A256M16GE-075E AAT:B TR
Micron Technology Inc.
Inquiry
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tape & Reel (TR) 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 4Gb (256M x 16) SDRAM - DDR4 1.33GHz - -
MT40A256M16GE-075E AAT:B TR
Micron Technology Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Cut Tape (CT) 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 4Gb (256M x 16) SDRAM - DDR4 1.33GHz - -
MT40A256M16GE-075E AAT:B TR
Micron Technology Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
- 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 4Gb (256M x 16) SDRAM - DDR4 1.33GHz - -
MT40A256M16GE-075E AUT:B
Micron Technology Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.33GHZ
Tray 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 4Gb (256M x 16) SDRAM - DDR4 1.33GHz - -
AS4C512M16D3L-12BCNTR
Alliance Memory,Inc.
Inquiry
-
-
MOQ: 2000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tape & Reel (TR) 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 8Gb (512M x 16) SDRAM - DDR3L 800MHz 13.75ns 15ns
AS4C512M16D3L-12BINTR
Alliance Memory,Inc.
Inquiry
-
-
MOQ: 2000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tape & Reel (TR) 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 8Gb (512M x 16) SDRAM - DDR3L 800MHz 13.75ns 15ns
MT40A256M16GE-083E:B
Micron Technology Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tray 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) 4Gb (256M x 16) SDRAM - DDR4 1.2GHz - -
MT41K512M16HA-125:A
Micron Technology Inc.
Inquiry
-
-
MOQ: 1020  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 8Gb (512M x 16) SDRAM - DDR3L 800MHz 13.5ns -