Memory - Zui Ai Technology（Taiwan）Company.

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		Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface
		Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface
			W631GG8MB-12	Winbond Electronics	232	3 days	-	IC SDRAM 1GBIT 800MHZ 78BGA MOQ: 1 MPQ: 1	IC SDRAM 1GBIT 800MHZ 78BGA	Tray	-	-	-	-	-	-	-	-	-
			W632GG8MB-12	Winbond Electronics	242	3 days	-	IC DRAM 2G PARALLEL 78VFBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 78VFBGA	Tray	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel
			W631GG8MB-12 TR	Winbond Electronics	Inquiry	-	-	IC SDRAM 1GBIT 800MHZ 78BGA MOQ: 2000 MPQ: 1	IC SDRAM 1GBIT 800MHZ 78BGA	Tape & Reel (TR)	-	-	-	-	-	-	-	-	-
			W632GG8MB-11 TR	Winbond Electronics	Inquiry	-	-	IC DRAM 2G PARALLEL 933MHZ MOQ: 2000 MPQ: 1	IC DRAM 2G PARALLEL 933MHZ	Tape & Reel (TR)	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	933MHz	20ns	Parallel
			W632GG8MB-12 TR	Winbond Electronics	Inquiry	-	-	IC DRAM 2G PARALLEL 78VFBGA MOQ: 2000 MPQ: 1	IC DRAM 2G PARALLEL 78VFBGA	Tape & Reel (TR)	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel
			W632GG8MB-15 TR	Winbond Electronics	Inquiry	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 2000 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	Tape & Reel (TR)	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	667MHz	20ns	Parallel
			W632GG8MB-11	Winbond Electronics	Inquiry	-	-	IC DRAM 2G PARALLEL 933MHZ MOQ: 242 MPQ: 1	IC DRAM 2G PARALLEL 933MHZ	Tray	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	933MHz	20ns	Parallel
			W632GG8MB-15	Winbond Electronics	Inquiry	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 242 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	Tray	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	667MHz	20ns	Parallel
			W632GG8MB12I TR	Winbond Electronics	Inquiry	-	-	IC DRAM 2G PARALLEL 800MHZ MOQ: 2000 MPQ: 1	IC DRAM 2G PARALLEL 800MHZ	Tape & Reel (TR)	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel
			W632GG8MB15I TR	Winbond Electronics	Inquiry	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 2000 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	Tape & Reel (TR)	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	667MHz	20ns	Parallel
			W632GG8MB12I	Winbond Electronics	Inquiry	-	-	IC DRAM 2G PARALLEL 800MHZ MOQ: 242 MPQ: 1	IC DRAM 2G PARALLEL 800MHZ	Tray	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel
			W632GG8MB15I	Winbond Electronics	Inquiry	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 242 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	Tray	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	667MHz	20ns	Parallel
			W632GG8MB-09	Winbond Electronics	Inquiry	-	-	IC DRAM 2G PARALLEL 1066MHZ MOQ: 242 MPQ: 1	IC DRAM 2G PARALLEL 1066MHZ	Tray	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	1066MHz	20ns	Parallel

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