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- Voltage - Supply：
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Discover 14 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Memory Size | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Memory Size | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|
Toshiba Memory America，Inc. |
26
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 2G PARALLEL 63TFBGA
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 2Gb (256M x 8) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 1G PARALLEL 63TFBGA
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Gb (128M x 8) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 63TFBGA
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 4Gb (512M x 8) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 210 MPQ: 1
|
IC FLASH 1G PARALLEL 63TFBGA
|
Tray | Benand | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Gb (128M x 8) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 210 MPQ: 1
|
IC FLASH 4G PARALLEL 63TFBGA
|
Tray | Benand | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 4Gb (512M x 8) | 25ns | Parallel | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 210 MPQ: 1
|
1GB SLC NAND BGA 24NM I TEMP (EE
|
- | Benand | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 1Gb (128M x 8) | - | - | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 210 MPQ: 1
|
2GB SLC BENAND 24NM BGA 9X11 (EE
|
- | Benand | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 2Gb (256M x 8) | - | - | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 210 MPQ: 1
|
2GB SLC NAND BGA 24NM I TEMP (EE
|
- | Benand | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 2Gb (256M x 8) | - | - | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 210 MPQ: 1
|
2G NAND SLC 24NM BGA
|
- | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 2Gb (256M x 8) | - | - | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 210 MPQ: 1
|
4GB SLC NAND 24NM BGA 9X11 1.8V
|
- | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 4Gb (512M x 8) | - | - | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 210 MPQ: 1
|
4GB SLC BENAND 24NM BGA 9X11 (EE
|
- | Benand | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 4Gb (512M x 8) | - | - | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 210 MPQ: 1
|
4G SLC NAND BGA 24NM
|
- | Benand | - | -40°C ~ 85°C | 4Gb (512M x 8) | - | - | - | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 210 MPQ: 1
|
4GB SLC NAND 24NM BGA 9X11 1.8V
|
- | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 4Gb (512M x 8) | - | - | 25ns | |||
|
|
Toshiba Memory America，Inc. |
Inquiry
|
- |
-
|
MOQ: 210 MPQ: 1
|
8GB SLC NAND 24NM BGA 9X11 3.3V
|
- | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 8Gb (1G x 8) | - | - | 25ns |
