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Discover 2,643 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
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Micron Technology Inc. |
Inquiry
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MOQ: 1190 MPQ: 1
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IC DRAM 576M PARALLEL 1067MHZ
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- | - | 1.28 V ~ 1.42 V | -40°C ~ 95°C (TC) | - | - | 576Mb (16M x 36) | Volatile | DRAM | DRAM | 1067MHz | 8ns | Parallel | - | ||
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Micron Technology Inc. |
Inquiry
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- |
-
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MOQ: 1190 MPQ: 1
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IC DRAM 576M PARALLEL 1067MHZ
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- | - | 1.28 V ~ 1.42 V | 0°C ~ 95°C (TC) | - | - | 576Mb (32M x 18) | Volatile | DRAM | DRAM | 1067MHz | 8ns | Parallel | - | ||
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Micron Technology Inc. |
Inquiry
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- |
-
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MOQ: 1190 MPQ: 1
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IC DRAM 576M PARALLEL 933MHZ
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- | - | 1.28 V ~ 1.42 V | 0°C ~ 95°C (TC) | - | - | 576Mb (16M x 36) | Volatile | DRAM | DRAM | 933MHz | 8ns | Parallel | - | ||
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Micron Technology Inc. |
Inquiry
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- |
-
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MOQ: 1190 MPQ: 1
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IC DRAM 576M PARALLEL 933MHZ
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- | - | 1.28 V ~ 1.42 V | 0°C ~ 95°C (TC) | - | - | 576Mb (32M x 18) | Volatile | DRAM | DRAM | 933MHz | 8ns | Parallel | - | ||
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Micron Technology Inc. |
Inquiry
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- |
-
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MOQ: 1020 MPQ: 1
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IC DRAM 4G PARALLEL 1.33GHZ
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- | - | 1.14 V ~ 1.26 V | -40°C ~ 105°C (TC) | - | - | 4Gb (256M x 16) | Volatile | SDRAM - DDR4 | DRAM | 1.33GHz | - | Parallel | - | ||
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Micron Technology Inc. |
Inquiry
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- |
-
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MOQ: 1020 MPQ: 1
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IC DRAM 4G PARALLEL 1.33GHZ
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- | - | 1.14 V ~ 1.26 V | -40°C ~ 95°C (TC) | - | - | 4Gb (256M x 16) | Volatile | SDRAM - DDR4 | DRAM | 1.33GHz | - | Parallel | - | ||
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Micron Technology Inc. |
Inquiry
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- |
-
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MOQ: 1782 MPQ: 1
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IC DRAM 512M PARALLEL 166MHZ
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- | - | 1.7 V ~ 1.95 V | -40°C ~ 105°C (TA) | - | - | 512Mb (32M x 16) | Volatile | SDRAM - Mobile LPDDR | DRAM | 166MHz | 5.0ns | Parallel | 15ns | ||
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Micron Technology Inc. |
2,000
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3 days |
-
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MOQ: 2000 MPQ: 1
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IC DRAM 4G 1600MHZ
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Tape & Reel (TR) | - | 1.1V | -40°C ~ 125°C (TC) | 200-WFBGA | Surface Mount | 4Gb (128M x 32) | Volatile | SDRAM - Mobile LPDDR4 | DRAM | 1600MHz | - | - | - | |||
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Micron Technology Inc. |
2,000
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3 days |
-
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MOQ: 1 MPQ: 1
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IC DRAM 4G 1600MHZ
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Cut Tape (CT) | - | 1.1V | -40°C ~ 125°C (TC) | 200-WFBGA | Surface Mount | 4Gb (128M x 32) | Volatile | SDRAM - Mobile LPDDR4 | DRAM | 1600MHz | - | - | - | |||
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Micron Technology Inc. |
2,000
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3 days |
-
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MOQ: 1 MPQ: 1
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IC DRAM 4G 1600MHZ
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- | - | 1.1V | -40°C ~ 125°C (TC) | 200-WFBGA | Surface Mount | 4Gb (128M x 32) | Volatile | SDRAM - Mobile LPDDR4 | DRAM | 1600MHz | - | - | - | |||
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Micron Technology Inc. |
1,310
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3 days |
-
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MOQ: 1 MPQ: 1
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IC DRAM 4G 1600MHZ
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- | - | 1.1V | -40°C ~ 85°C (TA) | 200-WFBGA | Surface Mount | 4Gb (128M x 32) | Volatile | SDRAM - Mobile LPDDR4 | DRAM | 1600MHz | - | - | - | |||
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Micron Technology Inc. |
1,360
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3 days |
-
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MOQ: 1 MPQ: 1
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IC DRAM 4G 1600MHZ
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- | - | 1.1V | -40°C ~ 105°C (TA) | 200-WFBGA | Surface Mount | 4Gb (128M x 32) | Volatile | SDRAM - Mobile LPDDR4 | DRAM | 1600MHz | - | - | - | |||
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Micron Technology Inc. |
Inquiry
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- |
-
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MOQ: 1000 MPQ: 1
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IC FLASH RAM 2G PARALLEL 166MHZ
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Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-VFBGA | Surface Mount | 2Gb (128M x 16)(NAND)，1Gb (32M x 32)(LPDRAM) | Non-Volatile | FLASH - NAND，Mobile LPDRAM | FLASH，RAM | 166MHz | - | Parallel | - | ||
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Micron Technology Inc. |
Inquiry
|
- |
-
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MOQ: 1000 MPQ: 1
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IC FLASH RAM 2G PARALLEL 166MHZ
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Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 168-VFBGA | Surface Mount | 2Gb (128M x 16)(NAND)，1Gb (32M x 32)(LPDRAM) | Non-Volatile | FLASH - NAND，Mobile LPDRAM | FLASH，RAM | 166MHz | - | Parallel | - | ||
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Micron Technology Inc. |
Inquiry
|
- |
-
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MOQ: 4000 MPQ: 1
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IC FLASH 256M SPI 108MHZ 8VDFPN
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Tape & Reel (TR) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | - | 256Mb (64M x 4) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI | 8ms，5ms | |||
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Micron Technology Inc. |
Inquiry
|
- |
-
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MOQ: 1000 MPQ: 1
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IC FLASH RAM 4G PARALLEL 200MHZ
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Bulk | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | - | Surface Mount | 4Gb (512M x 8)(NAND)，4Gb (256M x 16)(LPDRAM) | Non-Volatile | FLASH - NAND，Mobile LPDRAM | FLASH，RAM | 200MHz | - | Parallel | - | ||
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Micron Technology Inc. |
Inquiry
|
- |
-
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MOQ: 1000 MPQ: 1
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IC FLASH RAM 4G PARALLEL 200MHZ
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- | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | - | - | 4Gb (512M x 8)(NAND)，4Gb (128M x 32)(LPDRAM) | Non-Volatile | FLASH - NAND，Mobile LPDRAM | FLASH，RAM | 200MHz | - | Parallel | - | ||
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Micron Technology Inc. |
Inquiry
|
- |
-
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MOQ: 1000 MPQ: 1
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IC FLASH RAM 4G PARALLEL 200MHZ
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- | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | - | - | 4Gb (256M x 16)(NAND)，4Gb (128M x 32)(LPDRAM) | Non-Volatile | FLASH - NAND，Mobile LPDRAM | FLASH，RAM | 200MHz | - | Parallel | - | ||
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Micron Technology Inc. |
Inquiry
|
- |
-
|
MOQ: 2500 MPQ: 1
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IC FLASH 8M PARALLEL 44SO
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Tape & Reel (TR) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | Surface Mount | 8Mb (1M x 8，512K x 16) | Non-Volatile | FLASH - NOR | Flash | - | 70ns | Parallel | 70ns | ||
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Micron Technology Inc. |
Inquiry
|
- |
-
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MOQ: 2500 MPQ: 1
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IC FLASH 8M PARALLEL TFBGA
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Tape & Reel (TR) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | Surface Mount | 8Mb (1M x 8，512K x 16) | Non-Volatile | FLASH - NOR | Flash | - | 70ns | Parallel | 70ns |
