Discover 14 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Voltage - Supply Operating Temperature Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Write Cycle Time - Word, Page
MT47H64M8SH-25E AAT:H TR
Micron Technology Inc.
2,000
3 days
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MOQ: 2000  MPQ: 1
IC DRAM 512M PARALLEL 400MHZ
Tape & Reel (TR) 1.7 V ~ 1.9 V -40°C ~ 105°C (TA) 512Mb (64M x 8) Volatile SDRAM - DDR2 DRAM 400MHz 400ps 15ns
MT47H64M8SH-25E AAT:H TR
Micron Technology Inc.
2,000
3 days
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 400MHZ
Cut Tape (CT) 1.7 V ~ 1.9 V -40°C ~ 105°C (TA) 512Mb (64M x 8) Volatile SDRAM - DDR2 DRAM 400MHz 400ps 15ns
MT47H64M8SH-25E AAT:H TR
Micron Technology Inc.
2,000
3 days
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 400MHZ
- 1.7 V ~ 1.9 V -40°C ~ 105°C (TA) 512Mb (64M x 8) Volatile SDRAM - DDR2 DRAM 400MHz 400ps 15ns
MT47H64M8SH-25E AIT:H TR
Micron Technology Inc.
Inquiry
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MOQ: 2000  MPQ: 1
IC DRAM 512M PARALLEL 60FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 512Mb (64M x 8) Volatile SDRAM - DDR2 DRAM 400MHz 400ps 15ns
MT47H128M8SH-25E AAT:M TR
Micron Technology Inc.
Inquiry
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MOQ: 2000  MPQ: 1
IC DRAM 1G PARALLEL 60FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V -40°C ~ 105°C (TC) 1Gb (128M x 8) Volatile SDRAM - DDR2 DRAM 400MHz 400ps 15ns
MT47H128M8CF-3:H TR
Micron Technology Inc.
Inquiry
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MOQ: 2000  MPQ: 1
IC DRAM 1G PARALLEL 60FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 1Gb (128M x 8) Volatile SDRAM - DDR2 DRAM 333MHz 450ps 15ns
MT47H128M8CF-3:H TR
Micron Technology Inc.
Inquiry
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MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 60FBGA
Cut Tape (CT) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 1Gb (128M x 8) Volatile SDRAM - DDR2 DRAM 333MHz 450ps 15ns
MT47H128M8CF-3:H TR
Micron Technology Inc.
Inquiry
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MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 60FBGA
- 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 1Gb (128M x 8) Volatile SDRAM - DDR2 DRAM 333MHz 450ps 15ns
MT47H128M8SH-25E AAT:M
Micron Technology Inc.
Inquiry
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MOQ: 1518  MPQ: 1
IC DRAM 1G PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V -40°C ~ 105°C (TC) 1Gb (128M x 8) Volatile SDRAM - DDR2 DRAM 400MHz 400ps 15ns
MT47H64M8SH-25E AIT:H
Micron Technology Inc.
Inquiry
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-
MOQ: 1518  MPQ: 1
IC DRAM 512M PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 512Mb (64M x 8) Volatile SDRAM - DDR2 DRAM 400MHz 400ps 15ns
MT47H128M8SH-187E:M TR
Micron Technology Inc.
Inquiry
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MOQ: 2000  MPQ: 1
IC DRAM 1G PARALLEL 60FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 1Gb (128M x 8) Volatile SDRAM - DDR2 DRAM 533MHz 350ps 15ns
MT47H64M8SH-25E AAT:H
Micron Technology Inc.
Inquiry
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MOQ: 1518  MPQ: 1
IC DRAM 512M PARALLEL 400MHZ
Tray 1.7 V ~ 1.9 V -40°C ~ 105°C (TA) 512Mb (64M x 8) Volatile SDRAM - DDR2 DRAM 400MHz 400ps 15ns
CY14B116N-BA25XIT
Cypress Semiconductor Corp
Inquiry
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MOQ: 2000  MPQ: 1
IC NVSRAM 16M PARALLEL
Tape & Reel (TR) 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 16Mb (1M x 16) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM - 25ns 25ns
CY14B116N-BA25XI
Cypress Semiconductor Corp
Inquiry
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MOQ: 112  MPQ: 1
IC NVSRAM 16M PARALLEL
Tray 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 16Mb (1M x 16) Non-Volatile NVSRAM (Non-Volatile SRAM) NVSRAM - 25ns 25ns