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Discover 350 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Voltage - Supply | Operating Temperature | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Voltage - Supply | Operating Temperature | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
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Renesas Electronics America |
1,000
|
3 days |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 256K PARALLEL 28TSOP
|
Tape & Reel (TR) | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 256Kb (32K x 8) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
1,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28TSOP
|
Cut Tape (CT) | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 256Kb (32K x 8) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
1,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28TSOP
|
- | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 256Kb (32K x 8) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
400
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28TSOP
|
Tray | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 256Kb (32K x 8) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
384
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28TSOP
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 256Kb (32K x 8) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
Inquiry
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 256K PARALLEL 28TSOP
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 256Kb (32K x 8) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
986
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28TSOP
|
Cut Tape (CT) | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 256Kb (32K x 8) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
986
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28TSOP
|
- | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 256Kb (32K x 8) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
Microchip Technology |
164
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 64K PARALLEL 28TSOP
|
Tray | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | 64Kb (8K x 8) | Non-Volatile | EEPROM | EEPROM | - | 70ns | Parallel | 10ms | ||
|
|
|
Microchip Technology |
Inquiry
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
Tray | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 200ns | Parallel | 10ms | ||
|
|
|
Microchip Technology |
Inquiry
|
- |
-
|
MOQ: 234 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 200ns | Parallel | 10ms | ||
|
|
|
Microchip Technology |
Inquiry
|
- |
-
|
MOQ: 234 MPQ: 1
|
IC EEPROM 64K PARALLEL 28TSOP
|
Tray | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TC) | 64Kb (8K x 8) | Non-Volatile | EEPROM | EEPROM | - | 200ns | Parallel | 10ms | ||
|
|
|
Microchip Technology |
Inquiry
|
- |
-
|
MOQ: 468 MPQ: 1
|
IC EEPROM 64K PARALLEL 28TSOP
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | 64Kb (8K x 8) | Non-Volatile | EEPROM | EEPROM | - | 200ns | Parallel | 10ms | ||
|
|
|
Microchip Technology |
Inquiry
|
- |
-
|
MOQ: 468 MPQ: 1
|
IC EEPROM 16K PARALLEL 28TSOP
|
Tray | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | 16Kb (2K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | Parallel | 1ms | ||
|
|
|
Microchip Technology |
Inquiry
|
- |
-
|
MOQ: 468 MPQ: 1
|
IC EEPROM 16K PARALLEL 28TSOP
|
Tray | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 16Kb (2K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | Parallel | 1ms | ||
|
|
|
Microchip Technology |
Inquiry
|
- |
-
|
MOQ: 234 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
Tray | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | Parallel | 10ms | ||
|
|
|
Microchip Technology |
Inquiry
|
- |
-
|
MOQ: 234 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
Tray | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | Parallel | 10ms | ||
|
|
|
Microchip Technology |
Inquiry
|
- |
-
|
MOQ: 234 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
Tray | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | Parallel | 3ms | ||
|
|
|
Microchip Technology |
Inquiry
|
- |
-
|
MOQ: 234 MPQ: 1
|
IC EEPROM 256K PARALLEL 28TSOP
|
Tray | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | Parallel | 3ms | ||
|
|
|
Microchip Technology |
Inquiry
|
- |
-
|
MOQ: 234 MPQ: 1
|
IC EEPROM 64K PARALLEL 28TSOP
|
Tray | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | 64Kb (8K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | Parallel | 10ms |
