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Discover 2,443 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
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Maxim Integrated |
13,323
|
3 days |
-
|
MOQ: 1 MPQ: 1
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IC EEPROM 1K 1WIRE TO92-3
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Bulk | - | - | -40°C ~ 85°C (TA) | TO-226-3，TO-92-3 (TO-226AA) | TO-92-3 | 1Kb (256 x 4) | Non-Volatile | EEPROM | EEPROM | - | 2μs | 1-Wire? | - | ||
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Maxim Integrated |
24,000
|
3 days |
-
|
MOQ: 2000 MPQ: 1
|
IC EEPROM 4K 1WIRE TO92-3
|
Tape & Reel (TR) | - | 2.8 V ~ 5.25 V | -40°C ~ 85°C (TA) | TO-226-3，TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 4Kb (256 x 16) | Non-Volatile | EEPROM | EEPROM | - | 2μs | 1-Wire? | - | ||
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Maxim Integrated |
24,557
|
3 days |
-
|
MOQ: 1 MPQ: 1
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IC EEPROM 4K 1WIRE TO92-3
|
Cut Tape (CT) | - | 2.8 V ~ 5.25 V | -40°C ~ 85°C (TA) | TO-226-3，TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 4Kb (256 x 16) | Non-Volatile | EEPROM | EEPROM | - | 2μs | 1-Wire? | - | ||
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Alliance Memory，Inc. |
415
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC SRAM 64K PARALLEL 28DIP
|
Tube | - | 2.7 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP (0.600"，15.24mm) | 28-PDIP | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 55ns | Parallel | 55ns | ||
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Alliance Memory，Inc. |
3,124
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32DIP
|
Tube | - | 2.7 V ~ 5.5 V | 0°C ~ 70°C (TA) | 32-DIP (0.600"，15.24mm) | 32-PDIP | 1Mb (128K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 55ns | Parallel | 55ns | ||
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Maxim Integrated |
5,793
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC EPROM 16K 1WIRE TO92-3
|
Bulk | - | - | -40°C ~ 85°C (TA) | TO-226-3，TO-92-3 (TO-226AA) | TO-92-3 | 16Kb (16K x 1) | Non-Volatile | EPROM - OTP | EPROM | - | 15μs | 1-Wire? | - | ||
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Maxim Integrated |
10,425
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256 1WIRE TO92-3
|
Bulk | - | - | -40°C ~ 85°C (TA) | TO-226-3，TO-92-3 (TO-226AA) | TO-92-3 | 256b (32 x 8) | Non-Volatile | EEPROM | EEPROM | - | 15μs | 1-Wire? | - | ||
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Maxim Integrated |
4,057
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC EPROM 1K 1WIRE TO92-3
|
Bulk | - | 2.8 V ~ 6 V | -40°C ~ 85°C (TA) | TO-226-3，TO-92-3 (TO-226AA) | TO-92-3 | 1Kb (128 x 8) | Non-Volatile | EPROM - OTP | EPROM | - | - | 1-Wire? | - | ||
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Maxim Integrated |
19,954
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 4K 1WIRE TO92-3
|
Bulk | - | 2.8 V ~ 5.25 V | -40°C ~ 85°C (TA) | TO-226-3，TO-92-3 (TO-226AA) | TO-92-3 | 4Kb (256 x 16) | Non-Volatile | EEPROM | EEPROM | - | 2μs | 1-Wire? | - | ||
|
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Maxim Integrated |
10,784
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 20K 1WIRE TO92-3
|
Bulk | - | - | -40°C ~ 85°C (TA) | TO-226-3，TO-92-3 (TO-226AA) | TO-92-3 | 20Kb (256 x 80) | Non-Volatile | EEPROM | EEPROM | - | 2.27μs | 1-Wire? | - | ||
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Alliance Memory，Inc. |
893
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 32DIP
|
Tube | - | 2.7 V ~ 5.5 V | 0°C ~ 70°C (TA) | 32-DIP (0.600"，15.24mm) | 32-PDIP | 4Mb (512K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 55ns | Parallel | 55ns | ||
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STMicroelectronics |
1,042
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24PCDIP
|
Tube | - | 4.75 V ~ 5.5 V | 0°C ~ 70°C (TA) | 24-DIP Module (0.600"，15.24mm) | 24-PCDIP，CAPHAT? | 16Kb (2K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 150ns | Parallel | 150ns | ||
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STMicroelectronics |
1,115
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28PCDIP
|
Tube | - | 4.75 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-PCDIP，CAPHAT? | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 100ns | Parallel | 100ns | ||
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STMicroelectronics |
869
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28PCDIP
|
Tube | - | 4.75 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-PCDIP，CAPHAT? | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 70ns | Parallel | 70ns | ||
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STMicroelectronics |
584
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28PCDIP
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-PCDIP，CAPHAT? | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 100ns | Parallel | 100ns | ||
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Maxim Integrated |
163
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 200ns | Parallel | 200ns | ||
|
|
|
Maxim Integrated |
253
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 100ns | Parallel | 100ns | ||
|
|
|
Maxim Integrated |
335
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 100ns | Parallel | 100ns | ||
|
|
|
Maxim Integrated |
316
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 120ns | Parallel | 120ns | ||
|
|
|
Maxim Integrated |
142
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 150ns | Parallel | 150ns |
