- Series:
-
- Voltage - Supply:
-
- Package / Case:
-
- Supplier Device Package:
-
- Channel Type:
-
- Driven Configuration:
-
- Gate Type:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Selected conditions:
Discover 108 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
42,000
|
3 days |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 4A,4A | ||||
ON Semiconductor |
43,853
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 4A,4A | ||||
ON Semiconductor |
43,853
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
- | - | 10 V ~ 20 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 4A,4A | ||||
ON Semiconductor |
10,000
|
3 days |
-
|
MOQ: 2500 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 27 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | - | 21ns,8ns | 0.8V,2.25V | 1A,1.5A | ||||
ON Semiconductor |
12,102
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
Cut Tape (CT) | - | 8 V ~ 27 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | - | 21ns,8ns | 0.8V,2.25V | 1A,1.5A | ||||
ON Semiconductor |
12,102
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
- | - | 8 V ~ 27 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | - | 21ns,8ns | 0.8V,2.25V | 1A,1.5A | ||||
ON Semiconductor |
10,000
|
3 days |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | - | 10.6A,11.4A | ||||
ON Semiconductor |
12,541
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | - | 10.6A,11.4A | ||||
ON Semiconductor |
12,541
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
- | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | - | 10.6A,11.4A | ||||
ON Semiconductor |
7,500
|
3 days |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
8,665
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
8,665
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
- | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
2,500
|
3 days |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 10 V ~ 20 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 4A,4A | ||||
ON Semiconductor |
4,990
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 10 V ~ 20 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 4A,4A | ||||
ON Semiconductor |
4,990
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
- | Automotive,AEC-Q100 | 10 V ~ 20 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 4A,4A | ||||
ON Semiconductor |
1,469
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tube | Automotive,AEC-Q100 | 10 V ~ 20 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 4A,4A | ||||
ON Semiconductor |
75,000
|
3 days |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
76,308
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
76,308
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
- | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
3,000
|
3 days |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,9ns | 0.8V,2V | 3A,3A |