- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Selected conditions:
Discover 35 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
8,446
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3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
1,697
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3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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12 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 6V，9.5V | 2A，2.5A | ||
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Infineon Technologies |
1,434
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HI/LO SIDE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
1,189
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | 3A，3A | ||
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Infineon Technologies |
1,460
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3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FULL SELF OSC 14-DIP
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10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | 4 | N-Channel MOSFET | 600V | 120ns，50ns | 4.7V，9.3V | 180mA，260mA | ||
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Infineon Technologies |
1,792
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HI/LO SIDE 14-DIP
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3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
2,067
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 600V 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 22ns，18ns | 0.8V，2.5V | 4A，4A | ||
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Infineon Technologies |
1,092
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
168
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 600V 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2.5A，2.5A | ||
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Infineon Technologies |
1,086
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 14DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
135
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
44
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF BRIDGE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
92
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
4
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3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 500V 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2.5A，2.5A | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1500 MPQ: 1
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IC DRIVER HALF-BRIDGE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1500 MPQ: 1
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IC DRIVER HI/LO SIDE 600V 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1500 MPQ: 1
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IC DRIVER HALF BRIDGE 14DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1500 MPQ: 1
|
IC DVR HALF BRIDGE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA |
