- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Selected conditions:
Discover 98 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
18,868
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3 days |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF BRDG SELF-OSC 8-DIP
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10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
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Infineon Technologies |
2,498
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3 days |
-
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MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE SELF OSC 8DIP
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10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
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Infineon Technologies |
2,998
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 600V 8DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
2,820
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE OSC 8DIP
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10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
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Infineon Technologies |
2,624
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
2,628
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER DUAL LOW SIDE 8DIP
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6 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
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Infineon Technologies |
2,399
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC HIGH SIDE DRIVER SGL 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
2,602
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 600V 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 22ns，18ns | 0.8V，2.5V | 4A，4A | ||
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Infineon Technologies |
2,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 8DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
2,122
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 8.3V，12.6V | 250mA，500mA | ||
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Infineon Technologies |
2,868
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF BRIDGE 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
1,169
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
2,599
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | 1A，1A | ||
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Infineon Technologies |
2,050
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 8DIP
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5 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
195
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 8DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
2,200
|
3 days |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER LIMITING 8-DIP
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0 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Infineon Technologies |
2,795
|
3 days |
-
|
MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
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Infineon Technologies |
1,963
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
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Infineon Technologies |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
2,958
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER CUR-SENSE 8-DIP
|
12 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA |
