Operating Temperature:
Current - Output High,Low:
Current - Peak Output:
Rise / Fall Time (Typ):
Voltage - Isolation:
Propagation Delay tpLH / tpHL (Max):
Pulse Width Distortion (Max):
Voltage - Forward (Vf) (Typ):
Current - DC Forward (If) (Max):
Discover 5 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Operating Temperature Approvals Current - Output High,Low Current - Peak Output Rise / Fall Time (Typ) Voltage - Isolation Propagation Delay tpLH / tpHL (Max) Pulse Width Distortion (Max) Voltage - Forward (Vf) (Typ) Current - DC Forward (If) (Max)
FOD3150V
ON Semiconductor
781
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV 1CH GATE DRIVER 8DIP
-40°C ~ 100°C IEC,UL 1A,1A 1.5A 60ns,60ns 5000Vrms 500ns,500ns 300ns 1.5V 25mA
FOD3150
ON Semiconductor
18
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 5KV 1CH GATE DRIVER 8DIP
-40°C ~ 100°C UL 1A,1A 1.5A 60ns,60ns 5000Vrms 500ns,500ns 300ns 1.5V 25mA
TLP352(F)
Toshiba Semiconductor and Storage
189
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 3.75KV 1CH GATE DVR 8DIP
-40°C ~ 125°C CSA,cUL,UL 2A,2A 2.5A 15ns,8ns 3750Vrms 200ns,200ns 50ns 1.55V 20mA
TLP352F(D4,F)
Toshiba Semiconductor and Storage
110
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 3.75KV 1CH GATE DVR 8DIP
-40°C ~ 125°C CSA,cUL,UL,VDE 2A,2A 2.5A 15ns,8ns 3750Vrms 200ns,200ns 50ns 1.55V 20mA
TLP352(D4,F)
Toshiba Semiconductor and Storage
44
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 3.75KV 1CH GATE DVR 8DIP
-40°C ~ 125°C CSA,cUL,UL,VDE 2A,2A 2.5A 15ns,8ns 3750Vrms 200ns,200ns 50ns 1.55V 20mA