- Manufacturer：
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- Operating Temperature：
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- Current - Output / Channel：
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- Rise / Fall Time (Typ)：
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- Voltage - Isolation：
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- Voltage - Forward (Vf) (Typ)：
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- Current Transfer Ratio (Min)：
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- Turn On / Turn Off Time (Typ)：
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- Vce Saturation (Max)：
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Discover 50 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Output Type | Current - Output / Channel | Rise / Fall Time (Typ) | Voltage - Output (Max) | Voltage - Isolation | Voltage - Forward (Vf) (Typ) | Current Transfer Ratio (Min) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Output Type | Current - Output / Channel | Rise / Fall Time (Typ) | Voltage - Output (Max) | Voltage - Isolation | Voltage - Forward (Vf) (Typ) | Current Transfer Ratio (Min) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | |
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Lite-On Inc. |
30,375
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 2.5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | Transistor with Base | 100mA | 3μs，3μs | 30V | 2500Vrms | 1.2V | 20% @ 10mA | - | 500mV | ||
|
|
|
ON Semiconductor |
29,295
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 500% @ 10mA | 5μs，100μs (Max) | 1V | ||
|
|
|
Lite-On Inc. |
10,228
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 1.5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | Transistor with Base | 100mA | 3μs，3μs | 30V | 1500Vrms | 1.2V | 20% @ 10mA | - | 500mV | ||
|
|
|
ON Semiconductor |
5,155
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 100% @ 10mA | 5μs，40μs (Max) | 1V | ||
|
|
|
ON Semiconductor |
3,995
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 500% @ 10mA | 5μs，100μs (Max) | 1V | ||
|
|
|
ON Semiconductor |
1,832
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 100% @ 10mA | 5μs，40μs (Max) | 1V | ||
|
|
|
Isocom Components 2004 LTD |
1,345
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOCOUPLER DARLINGTON 6DIP
|
-55°C ~ 100°C | Darlington | - | - | 30V | 5300Vrms | 1.2V | 50% @ 10mA | 5μs，100μs | 1V | ||
|
|
|
ON Semiconductor |
1,599
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 500% @ 1mA | 25μs，18μs | 1V | ||
|
|
|
Toshiba Semiconductor and Storage |
3,026
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 2.5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | Transistor with Base | 100mA | 2μs，200μs | 30V | 2500Vrms | 1.15V | 20% @ 10mA | - | 500mV | ||
|
|
|
Isocom Components 2004 LTD |
1,959
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 5.3KV DARL W/BASE 6DIP
|
-55°C ~ 100°C | Darlington with Base | - | - | 30V | 5300Vrms | 1.2V | 500% @ 1mA | 125μs，100μs | 1V | ||
|
|
|
ON Semiconductor |
2,804
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Transistor with Base | 100mA | - | 200V | 4170Vrms | 1.15V | 20% @ 10mA | 5μs，5μs | 400mV | ||
|
|
|
ON Semiconductor |
464
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Transistor with Base | 100mA | - | 400V | 4170Vrms | 1.15V | 20% @ 10mA | 5μs，5μs | 400mV | ||
|
|
|
ON Semiconductor |
677
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Transistor with Base | 100mA | - | 80V | 4170Vrms | 1.15V | 20% @ 10mA | 5μs，5μs | 1V | ||
|
|
|
ON Semiconductor |
852
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 300% @ 10mA | 5μs，100μs (Max) | 1.25V | ||
|
|
|
ON Semiconductor |
483
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 500% @ 10mA | 5μs，100μs (Max) | 1V | ||
|
|
|
ON Semiconductor |
609
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Transistor with Base | 100mA | - | 300V | 4170Vrms | 1.15V | 20% @ 10mA | 5μs，5μs | 400mV | ||
|
|
|
Toshiba Semiconductor and Storage |
240
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 2.5KV TRANS W/BASE 6DIP
|
-55°C ~ 100°C | Transistor with Base | 100mA | 2μs，200μs | 30V | 2500Vrms | 1.15V | 20% @ 10mA | - | 500mV | ||
|
|
|
ON Semiconductor |
840
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV TRANS W/BASE 6DIP
|
-40°C ~ 100°C | Transistor with Base | 100mA | - | 80V | 4170Vrms | 1.15V | 20% @ 10mA | 5μs，5μs | 1V | ||
|
|
|
ON Semiconductor |
292
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 500% @ 10mA | 5μs，100μs (Max) | 1V | ||
|
|
|
ON Semiconductor |
963
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
OPTOISO 4.17KV DARL W/BASE 6DIP
|
-40°C ~ 100°C | Darlington with Base | 150mA | - | 30V | 4170Vrms | 1.2V | 500% @ 1mA | 25μs，18μs | 1V |
